JPS5636174A - Semiconductor photodetector device and method of manufacturing same - Google Patents

Semiconductor photodetector device and method of manufacturing same

Info

Publication number
JPS5636174A
JPS5636174A JP11605180A JP11605180A JPS5636174A JP S5636174 A JPS5636174 A JP S5636174A JP 11605180 A JP11605180 A JP 11605180A JP 11605180 A JP11605180 A JP 11605180A JP S5636174 A JPS5636174 A JP S5636174A
Authority
JP
Japan
Prior art keywords
manufacturing same
semiconductor photodetector
photodetector device
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11605180A
Other languages
English (en)
Japanese (ja)
Inventor
Fuiritsupu Rubouru Jiin
Biraado Miishieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5636174A publication Critical patent/JPS5636174A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP11605180A 1979-08-31 1980-08-25 Semiconductor photodetector device and method of manufacturing same Pending JPS5636174A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7921903A FR2464563A1 (fr) 1979-08-31 1979-08-31 Dispositif photodetecteur a semi-conducteur et procede de fabrication, et analyseur d'image comportant un tel dispositif

Publications (1)

Publication Number Publication Date
JPS5636174A true JPS5636174A (en) 1981-04-09

Family

ID=9229271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11605180A Pending JPS5636174A (en) 1979-08-31 1980-08-25 Semiconductor photodetector device and method of manufacturing same

Country Status (4)

Country Link
EP (1) EP0024970B1 (show.php)
JP (1) JPS5636174A (show.php)
DE (1) DE3067263D1 (show.php)
FR (1) FR2464563A1 (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06122630A (ja) * 1992-10-12 1994-05-06 Taiyo Yakuhin Kogyo Kk 安定な塩酸セフォチアム製剤

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446372A (en) * 1981-07-01 1984-05-01 Honeywell Inc. Detector cold shield
JPS6018070A (ja) * 1983-07-11 1985-01-30 Sharp Corp 二次元画像読取素子
FR2557371B1 (fr) * 1983-12-27 1987-01-16 Thomson Csf Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication
GB2175442B (en) * 1985-05-15 1989-05-24 Stc Plc Laser manufacture
DE3667226D1 (de) * 1985-08-27 1990-01-04 Siemens Ag Fotoempfindliche anordnung auf der basis von a-si:h fuer bildsensoren.
FR2990562B1 (fr) * 2012-05-09 2015-03-06 Sagem Defense Securite Procede de realisation d'un capteur infrarouge insb

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4828187A (show.php) * 1971-08-13 1973-04-13
JPS4996686A (show.php) * 1973-01-16 1974-09-12
JPS50125692A (show.php) * 1974-03-20 1975-10-02
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS5527657A (en) * 1978-08-19 1980-02-27 Fujitsu Ltd Method of manufacturing infrared ray detecting element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1578110A (show.php) * 1968-06-17 1969-08-14
US3864818A (en) * 1969-05-06 1975-02-11 Philips Corp Method of making a target for a camera tube with a mosaic of regions forming rectifying junctions
FR2080849A6 (show.php) * 1970-02-06 1971-11-26 Radiotechnique Compelec
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4828187A (show.php) * 1971-08-13 1973-04-13
JPS4996686A (show.php) * 1973-01-16 1974-09-12
JPS50125692A (show.php) * 1974-03-20 1975-10-02
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS5527657A (en) * 1978-08-19 1980-02-27 Fujitsu Ltd Method of manufacturing infrared ray detecting element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06122630A (ja) * 1992-10-12 1994-05-06 Taiyo Yakuhin Kogyo Kk 安定な塩酸セフォチアム製剤

Also Published As

Publication number Publication date
DE3067263D1 (en) 1984-05-03
EP0024970A3 (en) 1982-06-09
EP0024970B1 (fr) 1984-03-28
FR2464563B1 (show.php) 1981-09-11
FR2464563A1 (fr) 1981-03-06
EP0024970A2 (fr) 1981-03-11

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