DE3067263D1 - Method of manufacturing a semiconductor photodetector - Google Patents

Method of manufacturing a semiconductor photodetector

Info

Publication number
DE3067263D1
DE3067263D1 DE8080401158T DE3067263T DE3067263D1 DE 3067263 D1 DE3067263 D1 DE 3067263D1 DE 8080401158 T DE8080401158 T DE 8080401158T DE 3067263 T DE3067263 T DE 3067263T DE 3067263 D1 DE3067263 D1 DE 3067263D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080401158T
Other languages
German (de)
English (en)
Inventor
Jean Philippe Reboul
Michel Villard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3067263D1 publication Critical patent/DE3067263D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
DE8080401158T 1979-08-31 1980-08-06 Method of manufacturing a semiconductor photodetector Expired DE3067263D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7921903A FR2464563A1 (fr) 1979-08-31 1979-08-31 Dispositif photodetecteur a semi-conducteur et procede de fabrication, et analyseur d'image comportant un tel dispositif

Publications (1)

Publication Number Publication Date
DE3067263D1 true DE3067263D1 (en) 1984-05-03

Family

ID=9229271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080401158T Expired DE3067263D1 (en) 1979-08-31 1980-08-06 Method of manufacturing a semiconductor photodetector

Country Status (4)

Country Link
EP (1) EP0024970B1 (show.php)
JP (1) JPS5636174A (show.php)
DE (1) DE3067263D1 (show.php)
FR (1) FR2464563A1 (show.php)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446372A (en) * 1981-07-01 1984-05-01 Honeywell Inc. Detector cold shield
JPS6018070A (ja) * 1983-07-11 1985-01-30 Sharp Corp 二次元画像読取素子
FR2557371B1 (fr) * 1983-12-27 1987-01-16 Thomson Csf Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication
GB2175442B (en) * 1985-05-15 1989-05-24 Stc Plc Laser manufacture
DE3667226D1 (de) * 1985-08-27 1990-01-04 Siemens Ag Fotoempfindliche anordnung auf der basis von a-si:h fuer bildsensoren.
JPH06122630A (ja) * 1992-10-12 1994-05-06 Taiyo Yakuhin Kogyo Kk 安定な塩酸セフォチアム製剤
FR2990562B1 (fr) * 2012-05-09 2015-03-06 Sagem Defense Securite Procede de realisation d'un capteur infrarouge insb

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1578110A (show.php) * 1968-06-17 1969-08-14
US3864818A (en) * 1969-05-06 1975-02-11 Philips Corp Method of making a target for a camera tube with a mosaic of regions forming rectifying junctions
FR2080849A6 (show.php) * 1970-02-06 1971-11-26 Radiotechnique Compelec
JPS4828187A (show.php) * 1971-08-13 1973-04-13
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
JPS4996686A (show.php) * 1973-01-16 1974-09-12
JPS569020B2 (show.php) * 1974-03-20 1981-02-26
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS5527657A (en) * 1978-08-19 1980-02-27 Fujitsu Ltd Method of manufacturing infrared ray detecting element

Also Published As

Publication number Publication date
EP0024970A3 (en) 1982-06-09
EP0024970B1 (fr) 1984-03-28
FR2464563B1 (show.php) 1981-09-11
FR2464563A1 (fr) 1981-03-06
JPS5636174A (en) 1981-04-09
EP0024970A2 (fr) 1981-03-11

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee