DE3067263D1 - Method of manufacturing a semiconductor photodetector - Google Patents
Method of manufacturing a semiconductor photodetectorInfo
- Publication number
- DE3067263D1 DE3067263D1 DE8080401158T DE3067263T DE3067263D1 DE 3067263 D1 DE3067263 D1 DE 3067263D1 DE 8080401158 T DE8080401158 T DE 8080401158T DE 3067263 T DE3067263 T DE 3067263T DE 3067263 D1 DE3067263 D1 DE 3067263D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor photodetector
- photodetector
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7921903A FR2464563A1 (fr) | 1979-08-31 | 1979-08-31 | Dispositif photodetecteur a semi-conducteur et procede de fabrication, et analyseur d'image comportant un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3067263D1 true DE3067263D1 (en) | 1984-05-03 |
Family
ID=9229271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080401158T Expired DE3067263D1 (en) | 1979-08-31 | 1980-08-06 | Method of manufacturing a semiconductor photodetector |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0024970B1 (de) |
JP (1) | JPS5636174A (de) |
DE (1) | DE3067263D1 (de) |
FR (1) | FR2464563A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4446372A (en) * | 1981-07-01 | 1984-05-01 | Honeywell Inc. | Detector cold shield |
JPS6018070A (ja) * | 1983-07-11 | 1985-01-30 | Sharp Corp | 二次元画像読取素子 |
FR2557371B1 (fr) * | 1983-12-27 | 1987-01-16 | Thomson Csf | Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication |
GB2175442B (en) * | 1985-05-15 | 1989-05-24 | Stc Plc | Laser manufacture |
DE3667226D1 (de) * | 1985-08-27 | 1990-01-04 | Siemens Ag | Fotoempfindliche anordnung auf der basis von a-si:h fuer bildsensoren. |
JPH06122630A (ja) * | 1992-10-12 | 1994-05-06 | Taiyo Yakuhin Kogyo Kk | 安定な塩酸セフォチアム製剤 |
FR2990562B1 (fr) * | 2012-05-09 | 2015-03-06 | Sagem Defense Securite | Procede de realisation d'un capteur infrarouge insb |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1578110A (de) * | 1968-06-17 | 1969-08-14 | ||
US3864818A (en) * | 1969-05-06 | 1975-02-11 | Philips Corp | Method of making a target for a camera tube with a mosaic of regions forming rectifying junctions |
FR2079612A5 (de) * | 1970-02-06 | 1971-11-12 | Radiotechnique Compelec | |
JPS4828187A (de) * | 1971-08-13 | 1973-04-13 | ||
US3810796A (en) * | 1972-08-31 | 1974-05-14 | Texas Instruments Inc | Method of forming dielectrically isolated silicon diode array vidicon target |
JPS4996686A (de) * | 1973-01-16 | 1974-09-12 | ||
JPS569020B2 (de) * | 1974-03-20 | 1981-02-26 | ||
JPS52131489A (en) * | 1976-04-28 | 1977-11-04 | Oki Electric Ind Co Ltd | Photoelectric converter |
JPS5527657A (en) * | 1978-08-19 | 1980-02-27 | Fujitsu Ltd | Method of manufacturing infrared ray detecting element |
-
1979
- 1979-08-31 FR FR7921903A patent/FR2464563A1/fr active Granted
-
1980
- 1980-08-06 EP EP80401158A patent/EP0024970B1/de not_active Expired
- 1980-08-06 DE DE8080401158T patent/DE3067263D1/de not_active Expired
- 1980-08-25 JP JP11605180A patent/JPS5636174A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5636174A (en) | 1981-04-09 |
EP0024970B1 (de) | 1984-03-28 |
FR2464563A1 (fr) | 1981-03-06 |
EP0024970A3 (en) | 1982-06-09 |
FR2464563B1 (de) | 1981-09-11 |
EP0024970A2 (de) | 1981-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4352724B1 (en) | Method of manufacturing a semiconductor device | |
DE2966504D1 (en) | Method of making a semiconductor laser | |
GB2081159B (en) | Method of manufacturing a semiconductor device | |
JPS5694777A (en) | Method of manufacturing semiconductor | |
DE3271995D1 (en) | Method of manufacturing a semiconductor device | |
DE3167203D1 (en) | Method of manufacturing a semiconductor device | |
DE2966433D1 (en) | Method of manufacturing semiconductor laser devices | |
DE3070384D1 (en) | A method of producing semiconductor laser elements | |
JPS5650563A (en) | Method of manufacturing semiconductor device | |
DE3175085D1 (en) | Method of manufacturing a semiconductor device | |
MY8500674A (en) | Method of manufacturing semiconductor devices | |
DE2861353D1 (en) | Method of manufacturing a locos semiconductor device | |
DE3063768D1 (en) | A method of manufacturing a semiconductor device | |
JPS5696868A (en) | Method of manufacturing semiconductor device | |
DE3071906D1 (en) | A method of manufacturing a semiconductor device | |
GB2081160B (en) | Method of manufacturing a semiconductor device | |
JPS5541799A (en) | Method of manufacturing semiconductor miniature case | |
GB2081161B (en) | Method of manufacturing a semiconductor device | |
DE3164765D1 (en) | Method of manufacturing a semiconductor element | |
DE2961365D1 (en) | Method of manufacturing a semiconductor device | |
JPS5693366A (en) | Method of manufacturing semiconductor device | |
DE3067263D1 (en) | Method of manufacturing a semiconductor photodetector | |
DE3067007D1 (en) | Method of manufacturing a semiconductor device | |
JPS55160425A (en) | Method of manufacturing multiistage semiconductor device | |
DE3063971D1 (en) | A method of manufacturing a semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |