JPS562735A - Switching device - Google Patents

Switching device

Info

Publication number
JPS562735A
JPS562735A JP6416680A JP6416680A JPS562735A JP S562735 A JPS562735 A JP S562735A JP 6416680 A JP6416680 A JP 6416680A JP 6416680 A JP6416680 A JP 6416680A JP S562735 A JPS562735 A JP S562735A
Authority
JP
Japan
Prior art keywords
switching device
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6416680A
Other languages
English (en)
Other versions
JPS6348207B2 (ja
Inventor
Jiyakaaru Kurisuchiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS562735A publication Critical patent/JPS562735A/ja
Publication of JPS6348207B2 publication Critical patent/JPS6348207B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
    • H02M3/3372—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration of the parallel type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
JP6416680A 1979-06-12 1980-05-16 Switching device Granted JPS562735A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7915736A FR2458950A1 (fr) 1979-06-12 1979-06-12 Dispositif de commutation et son application a une alimentation de puissance du type commute

Publications (2)

Publication Number Publication Date
JPS562735A true JPS562735A (en) 1981-01-13
JPS6348207B2 JPS6348207B2 (ja) 1988-09-28

Family

ID=9226816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6416680A Granted JPS562735A (en) 1979-06-12 1980-05-16 Switching device

Country Status (5)

Country Link
US (1) US4315307A (ja)
EP (1) EP0020978A1 (ja)
JP (1) JPS562735A (ja)
FR (1) FR2458950A1 (ja)
IT (1) IT1150989B (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5625373A (en) * 1979-08-08 1981-03-11 Nec Corp Control circuit for power
JPS5754426A (ja) * 1980-08-12 1982-03-31 Siemens Ag
JPS5813021A (ja) * 1981-07-17 1983-01-25 Tech Res & Dev Inst Of Japan Def Agency 高速スイッチ回路
JPS58222774A (ja) * 1982-06-16 1983-12-24 Internatl Rectifier Corp Japan Ltd ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路
JP2012234926A (ja) * 2011-04-28 2012-11-29 Sanken Electric Co Ltd 半導体装置
JP2013125806A (ja) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp 電力用半導体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3041609A1 (de) * 1980-11-01 1982-06-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Paralleleanordnung von halbleiterschaltern
FR2497404A1 (fr) * 1980-12-29 1982-07-02 Thomson Csf Transistor mos a fonctionnement bipolaire en saturation
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
JPS59218042A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体集積回路
US4598330A (en) * 1984-10-31 1986-07-01 International Business Machines Corporation High power direct current switching circuit
KR100662172B1 (ko) * 1998-08-28 2006-12-27 마츠시타 덴끼 산교 가부시키가이샤 스위칭 레귤레이터 및 이를 이용한 엘에스아이 시스템

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053428A (ja) * 1964-11-23
US3401319A (en) * 1966-03-08 1968-09-10 Gen Micro Electronics Inc Integrated latch circuit
US3490027A (en) * 1967-12-05 1970-01-13 Ibm Transistor converter amplifier circuit
US3530364A (en) * 1969-05-27 1970-09-22 Gen Motors Corp Circuit for converting a direct current potential to an alternating current potential
CH504819A (de) * 1970-07-10 1971-03-15 Ibm Abtasteinrichtung
FR2100558B1 (ja) * 1970-07-23 1974-07-12 Trt Telecom Radio Electr
US3740581A (en) * 1972-03-08 1973-06-19 Hughes Aircraft Co Precision switching circuit for analog signals
US3995172A (en) * 1975-06-05 1976-11-30 International Business Machines Corporation Enhancement-and depletion-type field effect transistors connected in parallel
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
FR2406915A1 (fr) * 1977-10-20 1979-05-18 Kremlev Vyacheslav Circuit logique integre a injection

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5625373A (en) * 1979-08-08 1981-03-11 Nec Corp Control circuit for power
JPS5754426A (ja) * 1980-08-12 1982-03-31 Siemens Ag
JPS625539B2 (ja) * 1980-08-12 1987-02-05 Siemens Ag
JPS5813021A (ja) * 1981-07-17 1983-01-25 Tech Res & Dev Inst Of Japan Def Agency 高速スイッチ回路
JPS58222774A (ja) * 1982-06-16 1983-12-24 Internatl Rectifier Corp Japan Ltd ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路
JP2012234926A (ja) * 2011-04-28 2012-11-29 Sanken Electric Co Ltd 半導体装置
JP2013125806A (ja) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp 電力用半導体装置
US9106156B2 (en) 2011-12-14 2015-08-11 Mitsubishi Electric Corporation Power semiconductor device

Also Published As

Publication number Publication date
US4315307A (en) 1982-02-09
FR2458950B1 (ja) 1983-03-18
IT8021911A0 (it) 1980-05-09
FR2458950A1 (fr) 1981-01-02
IT1150989B (it) 1986-12-17
EP0020978A1 (fr) 1981-01-07
JPS6348207B2 (ja) 1988-09-28

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