JPS5626466A - Diode array - Google Patents
Diode arrayInfo
- Publication number
- JPS5626466A JPS5626466A JP10302679A JP10302679A JPS5626466A JP S5626466 A JPS5626466 A JP S5626466A JP 10302679 A JP10302679 A JP 10302679A JP 10302679 A JP10302679 A JP 10302679A JP S5626466 A JPS5626466 A JP S5626466A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- type
- current
- dispersingly
- doing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003071 parasitic effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To eliminate operation of a parasitic circuit caused by an impression current, when preparing an in-line-arrangement integrated diode array to be actually mounted onto a thermal head, etc., by separating a current passage between a parasitic transistor composing element and a regular impression current passing diode. CONSTITUTION:N<+> type regions 13, 14 and 15 are dispersingly formed on a P type Si substrate 12, P type island regions 16, 17 and 18 are provided in these regions 13, 14 and 15, and in which regions N<+> type regions 19, 20 and 21 are further dispersingly formed. By doing so, diodes D1, D2 and D3 are formed by regions 16 and 19, regions 17 and 20, and regions 18 and 21, respectively. And then, heat-generating bodies R1, R2 and R3, which are connected to the regions 19, 20 and 21, respectively, are connected to a switching transistor Q1', and this time, to the regions 16, 17 and 18 separate switching transistors Q1, Q2 and Q3 are connected, respectively. It is possible, by doing so, to provide an entirely different current separated from the currents passing through a parasitic circuit formed by all the regions and also through all the heat-generating bodies.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10302679A JPS5626466A (en) | 1979-08-13 | 1979-08-13 | Diode array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10302679A JPS5626466A (en) | 1979-08-13 | 1979-08-13 | Diode array |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5626466A true JPS5626466A (en) | 1981-03-14 |
Family
ID=14343127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10302679A Pending JPS5626466A (en) | 1979-08-13 | 1979-08-13 | Diode array |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626466A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57201350U (en) * | 1981-06-19 | 1982-12-21 |
-
1979
- 1979-08-13 JP JP10302679A patent/JPS5626466A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57201350U (en) * | 1981-06-19 | 1982-12-21 |
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