JPS5624925A - Selective growth of silicon - Google Patents
Selective growth of siliconInfo
- Publication number
- JPS5624925A JPS5624925A JP10027279A JP10027279A JPS5624925A JP S5624925 A JPS5624925 A JP S5624925A JP 10027279 A JP10027279 A JP 10027279A JP 10027279 A JP10027279 A JP 10027279A JP S5624925 A JPS5624925 A JP S5624925A
- Authority
- JP
- Japan
- Prior art keywords
- film
- growth
- substrate
- layer
- growth layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10027279A JPS5624925A (en) | 1979-08-08 | 1979-08-08 | Selective growth of silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10027279A JPS5624925A (en) | 1979-08-08 | 1979-08-08 | Selective growth of silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5624925A true JPS5624925A (en) | 1981-03-10 |
| JPS6226569B2 JPS6226569B2 (enrdf_load_stackoverflow) | 1987-06-09 |
Family
ID=14269561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10027279A Granted JPS5624925A (en) | 1979-08-08 | 1979-08-08 | Selective growth of silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624925A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5605846A (en) * | 1994-02-23 | 1997-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US5653802A (en) * | 1988-03-27 | 1997-08-05 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5733369A (en) * | 1986-03-28 | 1998-03-31 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5846320A (en) * | 1986-03-31 | 1998-12-08 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
| US6884698B1 (en) | 1994-02-23 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with crystallization of amorphous silicon |
| US6984550B2 (en) | 2001-02-28 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2012069964A (ja) * | 2005-09-12 | 2012-04-05 | Internatl Business Mach Corp <Ibm> | 窒化物上へゲルマニウム・スペーサを選択的に堆積するための構造及び方法 |
-
1979
- 1979-08-08 JP JP10027279A patent/JPS5624925A/ja active Granted
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5733369A (en) * | 1986-03-28 | 1998-03-31 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5853478A (en) * | 1986-03-28 | 1998-12-29 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
| US5846320A (en) * | 1986-03-31 | 1998-12-08 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
| US5653802A (en) * | 1988-03-27 | 1997-08-05 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5605846A (en) * | 1994-02-23 | 1997-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US6884698B1 (en) | 1994-02-23 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with crystallization of amorphous silicon |
| US7235828B2 (en) | 1994-02-23 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with residual nickel from crystallization of semiconductor film |
| US7749819B2 (en) | 1994-02-23 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US6984550B2 (en) | 2001-02-28 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7405115B2 (en) | 2001-02-28 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9330940B2 (en) | 2001-02-28 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2012069964A (ja) * | 2005-09-12 | 2012-04-05 | Internatl Business Mach Corp <Ibm> | 窒化物上へゲルマニウム・スペーサを選択的に堆積するための構造及び方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6226569B2 (enrdf_load_stackoverflow) | 1987-06-09 |
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