JPS5618484A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5618484A
JPS5618484A JP9404179A JP9404179A JPS5618484A JP S5618484 A JPS5618484 A JP S5618484A JP 9404179 A JP9404179 A JP 9404179A JP 9404179 A JP9404179 A JP 9404179A JP S5618484 A JPS5618484 A JP S5618484A
Authority
JP
Japan
Prior art keywords
layer
type
grown
semiconductor laser
light guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9404179A
Other languages
English (en)
Other versions
JPS6154280B2 (ja
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9404179A priority Critical patent/JPS5618484A/ja
Publication of JPS5618484A publication Critical patent/JPS5618484A/ja
Publication of JPS6154280B2 publication Critical patent/JPS6154280B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP9404179A 1979-07-24 1979-07-24 Manufacture of semiconductor laser Granted JPS5618484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9404179A JPS5618484A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9404179A JPS5618484A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5618484A true JPS5618484A (en) 1981-02-21
JPS6154280B2 JPS6154280B2 (ja) 1986-11-21

Family

ID=14099476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9404179A Granted JPS5618484A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5618484A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873176A (ja) * 1981-10-27 1983-05-02 Agency Of Ind Science & Technol 半導体レ−ザ
JPS59171896U (ja) * 1983-04-30 1984-11-16 トキコ株式会社 搬送装置
JPH02394A (ja) * 1987-12-28 1990-01-05 Canon Inc 半導体レーザー
JPH06238528A (ja) * 1992-07-17 1994-08-30 Shinjiyou Seisakusho:Yugen ナットの多列給送装置
JP2003031906A (ja) * 2001-07-16 2003-01-31 Sony Corp 半導体レーザ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5451491A (en) * 1977-09-30 1979-04-23 Hitachi Ltd Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5451491A (en) * 1977-09-30 1979-04-23 Hitachi Ltd Semiconductor laser

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873176A (ja) * 1981-10-27 1983-05-02 Agency Of Ind Science & Technol 半導体レ−ザ
JPS6355792B2 (ja) * 1981-10-27 1988-11-04 Kogyo Gijutsuin
JPS59171896U (ja) * 1983-04-30 1984-11-16 トキコ株式会社 搬送装置
JPH02394A (ja) * 1987-12-28 1990-01-05 Canon Inc 半導体レーザー
JPH06238528A (ja) * 1992-07-17 1994-08-30 Shinjiyou Seisakusho:Yugen ナットの多列給送装置
JP2003031906A (ja) * 2001-07-16 2003-01-31 Sony Corp 半導体レーザ

Also Published As

Publication number Publication date
JPS6154280B2 (ja) 1986-11-21

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