JPS56169384A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS56169384A
JPS56169384A JP7234380A JP7234380A JPS56169384A JP S56169384 A JPS56169384 A JP S56169384A JP 7234380 A JP7234380 A JP 7234380A JP 7234380 A JP7234380 A JP 7234380A JP S56169384 A JPS56169384 A JP S56169384A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor
exposed
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7234380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241436B2 (enrdf_load_stackoverflow
Inventor
Isamu Sakuma
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7234380A priority Critical patent/JPS56169384A/ja
Publication of JPS56169384A publication Critical patent/JPS56169384A/ja
Publication of JPS6241436B2 publication Critical patent/JPS6241436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • H01S5/2275Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
JP7234380A 1980-05-30 1980-05-30 Manufacture of semiconductor laser Granted JPS56169384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7234380A JPS56169384A (en) 1980-05-30 1980-05-30 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7234380A JPS56169384A (en) 1980-05-30 1980-05-30 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS56169384A true JPS56169384A (en) 1981-12-26
JPS6241436B2 JPS6241436B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=13486552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7234380A Granted JPS56169384A (en) 1980-05-30 1980-05-30 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56169384A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180889A (ja) * 1984-09-26 1986-04-24 シーメンス、アクチエンゲゼルシヤフト レーザーダイオードの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180889A (ja) * 1984-09-26 1986-04-24 シーメンス、アクチエンゲゼルシヤフト レーザーダイオードの製造方法

Also Published As

Publication number Publication date
JPS6241436B2 (enrdf_load_stackoverflow) 1987-09-02

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