JPS56169384A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS56169384A JPS56169384A JP7234380A JP7234380A JPS56169384A JP S56169384 A JPS56169384 A JP S56169384A JP 7234380 A JP7234380 A JP 7234380A JP 7234380 A JP7234380 A JP 7234380A JP S56169384 A JPS56169384 A JP S56169384A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor
- exposed
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7234380A JPS56169384A (en) | 1980-05-30 | 1980-05-30 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7234380A JPS56169384A (en) | 1980-05-30 | 1980-05-30 | Manufacture of semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56169384A true JPS56169384A (en) | 1981-12-26 |
JPS6241436B2 JPS6241436B2 (enrdf_load_stackoverflow) | 1987-09-02 |
Family
ID=13486552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7234380A Granted JPS56169384A (en) | 1980-05-30 | 1980-05-30 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56169384A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6180889A (ja) * | 1984-09-26 | 1986-04-24 | シーメンス、アクチエンゲゼルシヤフト | レーザーダイオードの製造方法 |
-
1980
- 1980-05-30 JP JP7234380A patent/JPS56169384A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6180889A (ja) * | 1984-09-26 | 1986-04-24 | シーメンス、アクチエンゲゼルシヤフト | レーザーダイオードの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6241436B2 (enrdf_load_stackoverflow) | 1987-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5743487A (en) | Semiconductor laser | |
JPS5496386A (en) | Manufacture of buried optical semiconductor device | |
JPS56169384A (en) | Manufacture of semiconductor laser | |
JPS568889A (en) | Manufacture of semiconductor laser | |
JPS575384A (en) | Semiconductor laser device | |
JPS57207388A (en) | Manufacture of semiconductor laser | |
JPS56169385A (en) | Manufacture of semiconductor laser | |
JPS57152180A (en) | Manufacture of semiconductor laser device | |
JPS57183091A (en) | Manufacture of optical integrated circuit | |
JPS5743428A (en) | Mesa etching method | |
JPS5688390A (en) | Manufacture of semiconductor laser | |
JPS56142691A (en) | Semiconductor light emitting device | |
JPS5618484A (en) | Manufacture of semiconductor laser | |
JPS55140285A (en) | Semiconductor laser | |
JPS56157083A (en) | Manufacture of semiconductor laser | |
JPS57167693A (en) | Manufacture of optical semiconductor element | |
JPS6215876A (ja) | 半導体発光装置の製造方法 | |
JPS5691489A (en) | Manufacture of semiconductor laser | |
JPS5748286A (en) | Manufacture of buried hetero structured semiconductor laser | |
JPS5712588A (en) | Manufacture of buried type heterojunction laser element | |
JPS5742184A (en) | Semiconductor laser element | |
JPS5596694A (en) | Semiconductor laser device and method of fabricating the same | |
JPS56112786A (en) | Manufacture of semiconductor laser | |
JPS5595386A (en) | Manufacture of semiconductor light emitting device | |
JPS5732684A (en) | Manufacture of semiconductor device |