JPS56169363A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56169363A
JPS56169363A JP7203480A JP7203480A JPS56169363A JP S56169363 A JPS56169363 A JP S56169363A JP 7203480 A JP7203480 A JP 7203480A JP 7203480 A JP7203480 A JP 7203480A JP S56169363 A JPS56169363 A JP S56169363A
Authority
JP
Japan
Prior art keywords
layer
approx
alloy
electrode
elute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7203480A
Other languages
English (en)
Inventor
Toshihiko Ono
Toshio Kurahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7203480A priority Critical patent/JPS56169363A/ja
Publication of JPS56169363A publication Critical patent/JPS56169363A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
JP7203480A 1980-05-29 1980-05-29 Semiconductor device Pending JPS56169363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7203480A JPS56169363A (en) 1980-05-29 1980-05-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7203480A JPS56169363A (en) 1980-05-29 1980-05-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56169363A true JPS56169363A (en) 1981-12-26

Family

ID=13477713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7203480A Pending JPS56169363A (en) 1980-05-29 1980-05-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56169363A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63129662A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置
US6758388B1 (en) 2001-02-27 2004-07-06 Rohr, Inc. Titanium aluminide honeycomb panel structures and fabrication method for the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026290U (ja) * 1973-07-03 1975-03-26
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026290U (ja) * 1973-07-03 1975-03-26
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63129662A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置
US6758388B1 (en) 2001-02-27 2004-07-06 Rohr, Inc. Titanium aluminide honeycomb panel structures and fabrication method for the same

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