JPS56169288A - Bipolar memory - Google Patents

Bipolar memory

Info

Publication number
JPS56169288A
JPS56169288A JP7393580A JP7393580A JPS56169288A JP S56169288 A JPS56169288 A JP S56169288A JP 7393580 A JP7393580 A JP 7393580A JP 7393580 A JP7393580 A JP 7393580A JP S56169288 A JPS56169288 A JP S56169288A
Authority
JP
Japan
Prior art keywords
comparator
same size
temperature
forming
reference signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7393580A
Other languages
Japanese (ja)
Other versions
JPS603712B2 (en
Inventor
Yukio Miyazaki
Mitsugi Takeda
Yoshiyuki Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55073935A priority Critical patent/JPS603712B2/en
Publication of JPS56169288A publication Critical patent/JPS56169288A/en
Publication of JPS603712B2 publication Critical patent/JPS603712B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To improve switching characteristics of a memory read by lessening influences of fluctuations of temperature upon a DC noise margin, by matching the temperature characteristics of a comparator input signal with those of a reference signal. CONSTITUTION:Transistors (TR) 203 and 204 of a reference bias circuit applying a reference signal to a comparator 200 forming an output circuit are of the same size with switching TRs 10 and 11 forming an input circuit and controlled by a 1/6 decoder 8, and with switching TRs 17 and 18 which correspond to the 1/64 decoder; and a diode 205 is of the same size with diodes 19-22 of fuses forming a PROM, and a resistance 207 is of the same size with fuses 23-26. Therefore, temperature characteristics of an input signal to the comparator 200 become similar with those of a reference signal to lessen influences of fluctuations of temperature upon a DC noise margin, and consequently while an increase in amplitude is prevented, a time constant never increases, generating an output which corresponds to the memory contents of a memory based upon stable and fast switching operation.
JP55073935A 1980-05-30 1980-05-30 bipolar memory Expired JPS603712B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55073935A JPS603712B2 (en) 1980-05-30 1980-05-30 bipolar memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55073935A JPS603712B2 (en) 1980-05-30 1980-05-30 bipolar memory

Publications (2)

Publication Number Publication Date
JPS56169288A true JPS56169288A (en) 1981-12-25
JPS603712B2 JPS603712B2 (en) 1985-01-30

Family

ID=13532470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55073935A Expired JPS603712B2 (en) 1980-05-30 1980-05-30 bipolar memory

Country Status (1)

Country Link
JP (1) JPS603712B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121667A (en) * 1982-01-13 1983-07-20 Nec Corp Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121667A (en) * 1982-01-13 1983-07-20 Nec Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS603712B2 (en) 1985-01-30

Similar Documents

Publication Publication Date Title
JPS5647995A (en) Memory device
KR910010850A (en) Current detection circuit in MOS type power transistor
JPS56169288A (en) Bipolar memory
WO1991003878A3 (en) Voltage coupling circuit for digital-to-time converter
JPS5483759A (en) Mos inverter circuit
JPS555552A (en) Dc reproducing circuit
GB1093538A (en) Improvements in or relating to switched frequency oscillators
JPS5544286A (en) Logic circuit of current selection type
CH642228B (en) CONVERTER OF AN ALTERNATIVE VOLTAGE INTO A DIRECT CURRENT AND OSCILLATOR CIRCUIT INCLUDING CONVERTER.
JPS6453611A (en) Driver circuit
EP0095724A3 (en) Switching circuit
JPS55112037A (en) Static type mos circuit
JPS553625A (en) Magnet driving circuit
JPS5776916A (en) Output circuit
JPS5710815A (en) Biasing circuit
JPS5799823A (en) Transistor circuit
JPS52102660A (en) Transistor output circuit
SU454684A1 (en) Schmitt trigger
JPS57103414A (en) Current source circuit
JPS5676686A (en) Horizontal oscillation circuit
FR2395646A1 (en) Flip=flop reset circuit with trigger - uses voltage divider in series with capacitor and shunted by diode to operate trigger (BE 27.12.78)
JPS56143722A (en) Integrated substrate bias generating circuit
GB953918A (en) Improvements in or relating to circuit arrangements for limiting modulated electrical signals
JPS54143183A (en) Temperature detecting circuit
GB1214954A (en) Improvements relating to electrical power supply arrangements