JPS56168655A - Correcting method for data of pattern generator for photomask - Google Patents

Correcting method for data of pattern generator for photomask

Info

Publication number
JPS56168655A
JPS56168655A JP7243980A JP7243980A JPS56168655A JP S56168655 A JPS56168655 A JP S56168655A JP 7243980 A JP7243980 A JP 7243980A JP 7243980 A JP7243980 A JP 7243980A JP S56168655 A JPS56168655 A JP S56168655A
Authority
JP
Japan
Prior art keywords
crossing region
obtd
information
reduction
original
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7243980A
Other languages
Japanese (ja)
Inventor
Kiyomi Morimoto
Motoyuki Nakahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7243980A priority Critical patent/JPS56168655A/en
Publication of JPS56168655A publication Critical patent/JPS56168655A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Abstract

PURPOSE:To easily obtain a reproduction corresponding to its original by adding prescribed correcting data during reduction by making use of information about a crossing region supposed between adjacent rectangles and by conducting processing on the basis of the correcting data during reproduction. CONSTITUTION:With regard to information about rectangles formed by dividing a polygonal original pattern, a crossing region between adjacent rectangules is first obtd. by calculation. By moving each side of each rectangle according to requirement, a reduced pattern is calculated, and processing codes for correction are added to information about each crossing region obtd. by calculation. When each crossing region disappears by operation on the basis of the extent of reduction, the shape is not maintained, and correction is required. Accordingly, enlarging codes contained in the processing codes are added to 2 opposite sides placed in a direction where the region disappears by reduction, thus forming a corrected pattern generator. By this way the correction time is shortened, and the operation is simplified, so a reproduction corresponding to its original can be obtd. easily.
JP7243980A 1980-05-29 1980-05-29 Correcting method for data of pattern generator for photomask Pending JPS56168655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7243980A JPS56168655A (en) 1980-05-29 1980-05-29 Correcting method for data of pattern generator for photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7243980A JPS56168655A (en) 1980-05-29 1980-05-29 Correcting method for data of pattern generator for photomask

Publications (1)

Publication Number Publication Date
JPS56168655A true JPS56168655A (en) 1981-12-24

Family

ID=13489318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7243980A Pending JPS56168655A (en) 1980-05-29 1980-05-29 Correcting method for data of pattern generator for photomask

Country Status (1)

Country Link
JP (1) JPS56168655A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306585A (en) * 1988-11-22 1994-04-26 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306585A (en) * 1988-11-22 1994-04-26 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5484671A (en) * 1988-11-22 1996-01-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5830606A (en) * 1988-11-22 1998-11-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5948574A (en) * 1988-11-22 1999-09-07 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6106981A (en) * 1988-11-22 2000-08-22 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6420075B1 (en) 1988-11-22 2002-07-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6458497B2 (en) 1988-11-22 2002-10-01 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region

Similar Documents

Publication Publication Date Title
JPS6425415A (en) Beam exposure system
JPS56168655A (en) Correcting method for data of pattern generator for photomask
JPS5370764A (en) Electrode formation method by lift off method
JPS51138356A (en) Priority interruption control circuit
JPS5380168A (en) Exposure method for electronic beam
JPS5750076A (en) Character reader
JPS5394878A (en) Mask matching key
JPS526073A (en) Magnetic field type electronic lens
JPS53128232A (en) Character pattern reduction method
JPS56122034A (en) Photomask
KR910001875A (en) Manufacturing Method of Exposure Mask
JPS5318917A (en) Control unit for electric light type information display panel
JPS5362438A (en) Microprogram controller
JPS5326567A (en) Production of shadow mask
JPS52106681A (en) Etching method
JPS51122379A (en) Treatment for defect of photo-mask
JPS57100727A (en) Correcting method for metal mask
JPS5654039A (en) Forming method for fine pattern
JPS5623102A (en) Registration code device
JPS5357736A (en) Gate circuit of thyristor
JPS52113682A (en) Trapezoid drawing apparatus
JPS52113679A (en) Sputter etching method
JPS53135580A (en) Electron beam exposing method
JPS5298491A (en) Thin-sheet piezo-electric vibrator
JPS5299773A (en) Forming method for small size regions