JPS56162850A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56162850A
JPS56162850A JP6691080A JP6691080A JPS56162850A JP S56162850 A JPS56162850 A JP S56162850A JP 6691080 A JP6691080 A JP 6691080A JP 6691080 A JP6691080 A JP 6691080A JP S56162850 A JPS56162850 A JP S56162850A
Authority
JP
Japan
Prior art keywords
ions
type region
channel cut
injected
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6691080A
Other languages
Japanese (ja)
Inventor
Masataka Shinguu
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6691080A priority Critical patent/JPS56162850A/en
Publication of JPS56162850A publication Critical patent/JPS56162850A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To reduce the quantity of necessary ions for channel cut by deeply diffusing impurity ions injected for the channel cut by a heat treatment prior to the step of oxidizing a field when manufacturing an MOS semiconductor device. CONSTITUTION:An oxidized silicon layer 2 is formed on an N type silicon substrate 1 on which a P type well 4 is formed, for example, in a complementary MOS semiconductor device, and a nitrided silicon layer 3 becoming a mask upon injection of ions is selectively covered on the layer 2. Then, impurity ions for channel cut are injected to form a P<+> type region 5 and an N<+> type region 6. In this case, the suitable amount of impurity ions are 1X10<13>pieces/cm<3> for the P type region and are 3X10<12>pieces/cm<3> for the N<+> type region. Thereafter, the impurity is annealed in nitrogen gas of 1 atm for approx. 15min. to deeply diffuse the thus injected impuriy ions. Thus, it can reduce the quantity of necessary impurity ions for the channel cut, and can prevent the occurrence of a stacking fault in the subsequent field oxidation.
JP6691080A 1980-05-20 1980-05-20 Manufacture of semiconductor device Pending JPS56162850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6691080A JPS56162850A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6691080A JPS56162850A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56162850A true JPS56162850A (en) 1981-12-15

Family

ID=13329586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6691080A Pending JPS56162850A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56162850A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743805A (en) * 1985-09-09 1988-05-10 Kabushiki Kaisha Toshiba Anode assembly of magnetron and method of manufacturing the same
US4862034A (en) * 1986-08-27 1989-08-29 Hitachi, Ltd. Structure of anode of magnetron and a method of manufacturing the same
US5003223A (en) * 1987-08-19 1991-03-26 Hitachi, Ltd. Structure of anode of magnetron and a method of manufacturing the same
US5677208A (en) * 1994-03-25 1997-10-14 Nippondenso Co., Ltd. Method for making FET having reduced oxidation inductive stacking fault
US6268298B1 (en) 1998-03-10 2001-07-31 Denso Corporation Method of manufacturing semiconductor device
CN108461448A (en) * 2017-02-17 2018-08-28 力晶科技股份有限公司 Method for manufacturing semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422776A (en) * 1977-07-22 1979-02-20 Toshiba Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422776A (en) * 1977-07-22 1979-02-20 Toshiba Corp Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743805A (en) * 1985-09-09 1988-05-10 Kabushiki Kaisha Toshiba Anode assembly of magnetron and method of manufacturing the same
US4862034A (en) * 1986-08-27 1989-08-29 Hitachi, Ltd. Structure of anode of magnetron and a method of manufacturing the same
US5003223A (en) * 1987-08-19 1991-03-26 Hitachi, Ltd. Structure of anode of magnetron and a method of manufacturing the same
US5677208A (en) * 1994-03-25 1997-10-14 Nippondenso Co., Ltd. Method for making FET having reduced oxidation inductive stacking fault
US6268298B1 (en) 1998-03-10 2001-07-31 Denso Corporation Method of manufacturing semiconductor device
CN108461448A (en) * 2017-02-17 2018-08-28 力晶科技股份有限公司 Method for manufacturing semiconductor element

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