JPS56162537A - Switching circuit with high dielectric strength - Google Patents
Switching circuit with high dielectric strengthInfo
- Publication number
- JPS56162537A JPS56162537A JP6609980A JP6609980A JPS56162537A JP S56162537 A JPS56162537 A JP S56162537A JP 6609980 A JP6609980 A JP 6609980A JP 6609980 A JP6609980 A JP 6609980A JP S56162537 A JPS56162537 A JP S56162537A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- circuit
- source
- drain
- dielectric strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To obtain dielectric strength double as high as that of a unit transistor (TR) by applying a reference voltage, which sets the operating point of a circuit, between the source and gate of one TR and by inputting a signal voltage, which controls the conductive resistance of the circuit, to the gate of another TR. CONSTITUTION:The drain of a TR11, the source of a TR12, and the gate and drain of a TR14 are connected together. Further, the source of the TR14, the gate of the TR12, and the drain of a TR13 are connected together; and a reference voltage Vref setting the operating point of a circuit is applied between the source and gate of the TR13, and a signal voltage VIN controlling the conductive resistance of the circuit is inputted to the gate 21 of the TR11 to control the lead-in resistance between the source of TR11 and the drain of the TR12. Then, the threshold level of each TR is denoted as VT, and voltages at a connection point 23 and terminal 24 as a V23 and V24 respectively. In this case, when the Vref is so set that Vref= V23+VIN+VT, the TRs 11 and 12 are equal in on resistance, so V24=2XV23. Consequently, the circuit operates as a switching circuit which has dielectric strength twice that of one unit TR.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6609980A JPS56162537A (en) | 1980-05-19 | 1980-05-19 | Switching circuit with high dielectric strength |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6609980A JPS56162537A (en) | 1980-05-19 | 1980-05-19 | Switching circuit with high dielectric strength |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56162537A true JPS56162537A (en) | 1981-12-14 |
Family
ID=13306088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6609980A Pending JPS56162537A (en) | 1980-05-19 | 1980-05-19 | Switching circuit with high dielectric strength |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56162537A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0220953A2 (en) * | 1985-10-25 | 1987-05-06 | Kabushiki Kaisha Toshiba | High potential hold circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267556A (en) * | 1975-12-03 | 1977-06-04 | Hitachi Ltd | High voltage proof mis switching circuit |
-
1980
- 1980-05-19 JP JP6609980A patent/JPS56162537A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267556A (en) * | 1975-12-03 | 1977-06-04 | Hitachi Ltd | High voltage proof mis switching circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0220953A2 (en) * | 1985-10-25 | 1987-05-06 | Kabushiki Kaisha Toshiba | High potential hold circuit |
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