JPS56161677A - Forming method for diaphragm - Google Patents
Forming method for diaphragmInfo
- Publication number
- JPS56161677A JPS56161677A JP6391180A JP6391180A JPS56161677A JP S56161677 A JPS56161677 A JP S56161677A JP 6391180 A JP6391180 A JP 6391180A JP 6391180 A JP6391180 A JP 6391180A JP S56161677 A JPS56161677 A JP S56161677A
- Authority
- JP
- Japan
- Prior art keywords
- psg
- diaphragm
- electrode
- mass production
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 101000617707 Homo sapiens Pregnancy-specific beta-1-glycoprotein 11 Proteins 0.000 abstract 1
- 102100022023 Pregnancy-specific beta-1-glycoprotein 11 Human genes 0.000 abstract 1
- 239000007853 buffer solution Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
PURPOSE:To perform the mass production of a diaphragm by forming PSG and BSG films as etching resistors of surface inactivated insulating film and electrode. CONSTITUTION:An impurity diffused layer 11 is formed on an Si substrate 10, a window is opened at a thermally oxidized film 12, an electrode 13 is attached, and a PSG14 is covered. When it is thrown in an alkaline etching solution as it is, a diaphragm 15 is formed due to the etching speed difference of the PSG (or BSG) and the SiO2 in the state that the PSG is slightly retained, dirts are not adhered, its yield is improved, and its mass production can be performed. The remaining PSG is removed with HF buffer solution to complete it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6391180A JPS56161677A (en) | 1980-05-16 | 1980-05-16 | Forming method for diaphragm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6391180A JPS56161677A (en) | 1980-05-16 | 1980-05-16 | Forming method for diaphragm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56161677A true JPS56161677A (en) | 1981-12-12 |
Family
ID=13242982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6391180A Pending JPS56161677A (en) | 1980-05-16 | 1980-05-16 | Forming method for diaphragm |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56161677A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066267A (en) * | 1997-09-18 | 2000-05-23 | International Business Machines Corporation | Etching of silicon nitride |
| US6117796A (en) * | 1998-08-13 | 2000-09-12 | International Business Machines Corporation | Removal of silicon oxide |
| US6150282A (en) * | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
| US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
| US6254796B1 (en) * | 1997-06-25 | 2001-07-03 | International Business Machines Corporation | Selective etching of silicate |
-
1980
- 1980-05-16 JP JP6391180A patent/JPS56161677A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6254796B1 (en) * | 1997-06-25 | 2001-07-03 | International Business Machines Corporation | Selective etching of silicate |
| US6066267A (en) * | 1997-09-18 | 2000-05-23 | International Business Machines Corporation | Etching of silicon nitride |
| US6150282A (en) * | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
| US6117796A (en) * | 1998-08-13 | 2000-09-12 | International Business Machines Corporation | Removal of silicon oxide |
| US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
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