JPS5586133A - Preparation of semiconductor element - Google Patents

Preparation of semiconductor element

Info

Publication number
JPS5586133A
JPS5586133A JP15764078A JP15764078A JPS5586133A JP S5586133 A JPS5586133 A JP S5586133A JP 15764078 A JP15764078 A JP 15764078A JP 15764078 A JP15764078 A JP 15764078A JP S5586133 A JPS5586133 A JP S5586133A
Authority
JP
Japan
Prior art keywords
film
glass
heated
substrate
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15764078A
Other languages
Japanese (ja)
Inventor
Kenichi Goto
Masafumi Miyagawa
Shotaro Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15764078A priority Critical patent/JPS5586133A/en
Publication of JPS5586133A publication Critical patent/JPS5586133A/en
Pending legal-status Critical Current

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Landscapes

  • Dicing (AREA)

Abstract

PURPOSE: To effect excellent partition by scribing a film protected by glass after the film has been heated in the presence of O2.
CONSTITUTION: In case glass powder attached to a mesa groove 5 is heated, the powder is heated in the presence of O2 so that it can adapt itself to the glass of PbO or ZnO groups to form a glass film 6 of homogeneity and to grow a SiO2 film 7 between the glass film 6 and Si crystallized surface of a substrate 1 while increasing the readiness of wetting between the substrate 1 and the glass film 6. Then the film 6 coated with glass is scribed by a sharp edge of diamond 9, and stress conveyed from the surface of the uniformly formed glass film 6 is centered around the prepared hole, and distortion, if pressed by a roller 10, will divide the film coated on the cleavage. Therefore, no cracking layer toward the inside of the crystal on the pellet side does not occur, nor does the crack of the glass layer as well as the absence of semiconductors.
COPYRIGHT: (C)1980,JPO&Japio
JP15764078A 1978-12-22 1978-12-22 Preparation of semiconductor element Pending JPS5586133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15764078A JPS5586133A (en) 1978-12-22 1978-12-22 Preparation of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15764078A JPS5586133A (en) 1978-12-22 1978-12-22 Preparation of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5586133A true JPS5586133A (en) 1980-06-28

Family

ID=15654135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15764078A Pending JPS5586133A (en) 1978-12-22 1978-12-22 Preparation of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5586133A (en)

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