JPS56158419A - Semiamorphous semiconductor and manufacture therefor - Google Patents
Semiamorphous semiconductor and manufacture thereforInfo
- Publication number
- JPS56158419A JPS56158419A JP6259080A JP6259080A JPS56158419A JP S56158419 A JPS56158419 A JP S56158419A JP 6259080 A JP6259080 A JP 6259080A JP 6259080 A JP6259080 A JP 6259080A JP S56158419 A JPS56158419 A JP S56158419A
- Authority
- JP
- Japan
- Prior art keywords
- nonpaired
- semiconductor
- couples
- amorphous
- coupling hands
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6259080A JPS56158419A (en) | 1980-05-12 | 1980-05-12 | Semiamorphous semiconductor and manufacture therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6259080A JPS56158419A (en) | 1980-05-12 | 1980-05-12 | Semiamorphous semiconductor and manufacture therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56158419A true JPS56158419A (en) | 1981-12-07 |
| JPH0319694B2 JPH0319694B2 (enExample) | 1991-03-15 |
Family
ID=13204680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6259080A Granted JPS56158419A (en) | 1980-05-12 | 1980-05-12 | Semiamorphous semiconductor and manufacture therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56158419A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119978A (ja) * | 1985-11-20 | 1987-06-01 | Matsushita Electric Ind Co Ltd | 非晶質太陽電池素子 |
| JPH02248037A (ja) * | 1989-03-22 | 1990-10-03 | Fuji Electric Co Ltd | 非晶質半導体の生成方法 |
-
1980
- 1980-05-12 JP JP6259080A patent/JPS56158419A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119978A (ja) * | 1985-11-20 | 1987-06-01 | Matsushita Electric Ind Co Ltd | 非晶質太陽電池素子 |
| JPH02248037A (ja) * | 1989-03-22 | 1990-10-03 | Fuji Electric Co Ltd | 非晶質半導体の生成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319694B2 (enExample) | 1991-03-15 |
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