JPS56153776A - Semiconductor pressure transducer - Google Patents

Semiconductor pressure transducer

Info

Publication number
JPS56153776A
JPS56153776A JP5755580A JP5755580A JPS56153776A JP S56153776 A JPS56153776 A JP S56153776A JP 5755580 A JP5755580 A JP 5755580A JP 5755580 A JP5755580 A JP 5755580A JP S56153776 A JPS56153776 A JP S56153776A
Authority
JP
Japan
Prior art keywords
resistors
resistance value
crystalline orientation
gauge
compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5755580A
Other languages
Japanese (ja)
Inventor
Shunji Shiromizu
Ryuzo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5755580A priority Critical patent/JPS56153776A/en
Publication of JPS56153776A publication Critical patent/JPS56153776A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Abstract

PURPOSE:To conduct the temperature compensation of zero potential effectively by using diffusion resistors for compensation based upon a fact that the difference of the resistance value of gauge resistors forming pairs is the specified ratio or less of the resistance value. CONSTITUTION:A diffusion resistor layer 13 is formed on a diaphragm 12 of a semiconductor substrate 11, a 100 surface thereof is used as a main surface. The layer 13 consists of gauge resistors Rp1, Rp2 made up in 1 inversion 10 crystalline orientation, gauge resistors RN1, RN2 built up in 110 crystalline orientation and resistors r1, r2 for compensation each formed in 100 and 001 crystalline orientation. These resistors r1, r2 are designed in the resistance value less than one twentieth times as large as the resistance value of the resistors Rp1-RN1. These resistors Rp1, RN1 are wired in series through the resistor r1, the resistors Rp2, RN2 are wired in series, and the resistors are bridge-connected in relationship that the resistors showing the resistance change of the same polarity form opposite sides mutually. According to such constitution, a zero point is not unbalanced even when bridge driving voltage is altered in response to a temperature change.
JP5755580A 1980-04-30 1980-04-30 Semiconductor pressure transducer Pending JPS56153776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5755580A JPS56153776A (en) 1980-04-30 1980-04-30 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5755580A JPS56153776A (en) 1980-04-30 1980-04-30 Semiconductor pressure transducer

Publications (1)

Publication Number Publication Date
JPS56153776A true JPS56153776A (en) 1981-11-27

Family

ID=13059051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5755580A Pending JPS56153776A (en) 1980-04-30 1980-04-30 Semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS56153776A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039567A1 (en) * 2009-09-30 2011-04-07 Tecsis Gmbh Measuring device comprising a detunable resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039567A1 (en) * 2009-09-30 2011-04-07 Tecsis Gmbh Measuring device comprising a detunable resistor

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