JPS56153775A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS56153775A
JPS56153775A JP4300481A JP4300481A JPS56153775A JP S56153775 A JPS56153775 A JP S56153775A JP 4300481 A JP4300481 A JP 4300481A JP 4300481 A JP4300481 A JP 4300481A JP S56153775 A JPS56153775 A JP S56153775A
Authority
JP
Japan
Prior art keywords
regions
bpt
integrated circuit
semiconductor integrated
pinched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4300481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0311549B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP4300481A priority Critical patent/JPS56153775A/ja
Publication of JPS56153775A publication Critical patent/JPS56153775A/ja
Publication of JPH0311549B2 publication Critical patent/JPH0311549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
JP4300481A 1981-03-23 1981-03-23 Semiconductor integrated circuit Granted JPS56153775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4300481A JPS56153775A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4300481A JPS56153775A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP52015880A Division JPS5853517B2 (ja) 1977-02-02 1977-02-15 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS56153775A true JPS56153775A (en) 1981-11-27
JPH0311549B2 JPH0311549B2 (enrdf_load_stackoverflow) 1991-02-18

Family

ID=12651844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4300481A Granted JPS56153775A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56153775A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739386A (en) * 1985-11-19 1988-04-19 Fujitsu Limited Bipolar transistor having improved switching time
US4996581A (en) * 1988-02-03 1991-02-26 Kabushiki Kaisha Toshiba Bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739386A (en) * 1985-11-19 1988-04-19 Fujitsu Limited Bipolar transistor having improved switching time
US4996581A (en) * 1988-02-03 1991-02-26 Kabushiki Kaisha Toshiba Bipolar transistor

Also Published As

Publication number Publication date
JPH0311549B2 (enrdf_load_stackoverflow) 1991-02-18

Similar Documents

Publication Publication Date Title
JPS53132275A (en) Semiconductor device and its production
JPS539469A (en) Semiconductor device having electrode of stepped structure and its production
EP0393863A3 (en) Semiconductor memory device
JPS55140265A (en) Semiconductor memory device and method of fabricating the same
JPS56153775A (en) Semiconductor integrated circuit
JPS57162365A (en) Semiconductor device
JPS55153367A (en) Semiconductor device
JPS56153774A (en) Semiconductor integrated circuit
JPS57118669A (en) Multiemitter type npn transistor
JPS5261977A (en) Semiconductor integrated circuit device and its production
JPS56101770A (en) Semiconductor memory device
JPS5297683A (en) Semiconductor circuit device
JPS5617067A (en) Semiconductor switch
JPS5715466A (en) Semiconductor device
JPS5575256A (en) Semiconductor device
JPS5260078A (en) Pnp type transistor for semiconductor integrated circuit
JPS54101291A (en) Semiconductor memory device
JPS5469079A (en) Manufacture of semiconductor device
JPS54126462A (en) Production of semiconductor device
JPS5735366A (en) Semiconductor integrated circuit device
JPS5544750A (en) Memory device
JPS51123071A (en) Fabrication technique of semiconductor device
JPS57143877A (en) Semiconductor device
JPS5542365A (en) Junction destructive write type semiconductor memory unit
JPS55128862A (en) Junction breakdown write-in type semiconductor memory device and method of fabricating the same