JPS56153774A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS56153774A
JPS56153774A JP4300381A JP4300381A JPS56153774A JP S56153774 A JPS56153774 A JP S56153774A JP 4300381 A JP4300381 A JP 4300381A JP 4300381 A JP4300381 A JP 4300381A JP S56153774 A JPS56153774 A JP S56153774A
Authority
JP
Japan
Prior art keywords
regions
collectors
emitters
bpt
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4300381A
Other languages
Japanese (ja)
Other versions
JPH0368539B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP4300381A priority Critical patent/JPS56153774A/en
Publication of JPS56153774A publication Critical patent/JPS56153774A/en
Publication of JPH0368539B2 publication Critical patent/JPH0368539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To enable to operate a semiconductor integrated circuit at high speed by employing a bipolar transistor being placed under a state that base regions are pinched off approximately, for logical gates of various kinds. CONSTITUTION:An N<+> region 1, an N<-> region 2, P regions 4, 5 and N<+> regions 3, 3' are each the emitters, bases and collectors of an inverted bipolar transistor BPT, and P regions 6, N regions 7, 8 and P regions 9, 9' are each emitters, bases and collectors. Since the base regions 5 existing among the emitters and collectors of the BPT are formed by diffusion from the regions 4, the thickness is thin, the density of the impurities is low and they are brought to a condition that is pinched off approximately. When the BPT designed in this manner is employed for logical gates of various kinds, a small number carrier accumulating effect is slight, and capacity among electrodes is small, thus obtaning a semiconductor IC which can work at high speed.
JP4300381A 1981-03-23 1981-03-23 Semiconductor integrated circuit Granted JPS56153774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4300381A JPS56153774A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4300381A JPS56153774A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP52015880A Division JPS5853517B2 (en) 1977-02-02 1977-02-15 semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS56153774A true JPS56153774A (en) 1981-11-27
JPH0368539B2 JPH0368539B2 (en) 1991-10-28

Family

ID=12651815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4300381A Granted JPS56153774A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56153774A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device

Also Published As

Publication number Publication date
JPH0368539B2 (en) 1991-10-28

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