JPS54101291A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS54101291A JPS54101291A JP724578A JP724578A JPS54101291A JP S54101291 A JPS54101291 A JP S54101291A JP 724578 A JP724578 A JP 724578A JP 724578 A JP724578 A JP 724578A JP S54101291 A JPS54101291 A JP S54101291A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- base
- layer
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To prevent the damage in error, by reducing the write-in power through the increase in the impurity concentration for the base surface part of transistor forming the memory cell.
CONSTITUTION: The common collector layer 2 consisting of the N type layer is formed on the semiconductor substrate 1 consisting of the p type layer, the p+ type base region 3 is formed on the specific part of the collector layer 2 and the emitter region 4 of N+ type is formed at a part of the base region. The implanted layer 5 of N+ type is formed between the substrate 1 and the collector layer 2, and the low resistance region 6 is connected to the implanted layer 5 from the surface of device. The p+ region 7 having comparatively greater impurity concentration is formed at the surface of the base region 3. When pulse current is fed between the emitter 4 and the base 5, since the current concentrates on the P+ type region 7, the junction destruction between the emitter and the base can be achieved with small current.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP724578A JPS54101291A (en) | 1978-01-27 | 1978-01-27 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP724578A JPS54101291A (en) | 1978-01-27 | 1978-01-27 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54101291A true JPS54101291A (en) | 1979-08-09 |
Family
ID=11660618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP724578A Pending JPS54101291A (en) | 1978-01-27 | 1978-01-27 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101291A (en) |
-
1978
- 1978-01-27 JP JP724578A patent/JPS54101291A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5279679A (en) | Semiconductor memory device | |
EP0116651A4 (en) | Photothyristor. | |
JPS5290273A (en) | Semiconductor device | |
JPS54140875A (en) | Semiconductor device | |
JPS54101291A (en) | Semiconductor memory device | |
JPS5593262A (en) | Semiconductor device | |
JPS5561063A (en) | Schottky barrier diode built-in transistor | |
JPS5713758A (en) | Semiconductor device | |
JPS57196563A (en) | Semiconductor device | |
JPS54159883A (en) | Semiconductor device | |
JPS5297683A (en) | Semiconductor circuit device | |
JPS57206072A (en) | Semiconductor device | |
JPS5632763A (en) | Semiconductor device | |
JPS5428581A (en) | Manufacture of semiconductor device | |
JPS5353254A (en) | Semiconductor device | |
JPS53108778A (en) | Transistor | |
JPS57140056A (en) | Semiconductor storage device | |
JPS53107279A (en) | Semiconductor device | |
JPS55107259A (en) | Power transistor | |
JPS5736854A (en) | Integrated circuit device | |
JPS5352063A (en) | Production of pn junction semiconductor unit | |
JPS5382276A (en) | Production of semiconductor device | |
JPS546481A (en) | Manufacture for semiconductor integrated circuit | |
JPS5587476A (en) | Semiconductor device | |
JPS5352062A (en) | Production of pn junction semiconductor unit |