JPS56152971A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS56152971A JPS56152971A JP5435280A JP5435280A JPS56152971A JP S56152971 A JPS56152971 A JP S56152971A JP 5435280 A JP5435280 A JP 5435280A JP 5435280 A JP5435280 A JP 5435280A JP S56152971 A JPS56152971 A JP S56152971A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- evacuated
- treating
- takeout
- continued
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obain a titled device which does not backflow atmospheric components and others into a treating chamber and can protect the inside of the treating chamber against contamination by so constituting the same that a sputtering gas is flowed from the inside of the treating chamber into a charging chamber and a takeout chamber while all the sluice valves are open.
CONSTITUTION: A charging chamber 1 and an intermediate heating chamber 5 housing substrates are evacuated by means of a vacuum pump 11. A takeout chamber 3 and an intermediate cooling chamber 8 are also evacuated in a similar manner. The inside of the chamber 3 once opens to the atmosphere, but next it is closed and the inside of the respective chambers 3, 8 is evacuated a vacuum pump 13. Further, a sputtering gas 13 is introduced ito a sputtering chamber 2, which is then evacuated by the pump 13 to create a gaseous atmosphere of a high vacuum. Next, sluice valves 4, 6, 9 are opened and the substrates in the chamber 1 are successively transferred into the chamber 5 and chamber 2 and the chamber 8 and chamber 3. The introduction of said gas into the chamber 2 is continued; at the same time, the evacuation from the chamber 1 and chamber 3 is continued, so that the flows going from the inside of the chamber 2 to the chamber 1 and the chamber 2 are produced. Hence, atmospheric components and others are prevented from being backflowed into the chamber 2 and the inside of said chamber is protected from contamination.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5435280A JPS6037871B2 (en) | 1980-04-25 | 1980-04-25 | How sputtering equipment works |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5435280A JPS6037871B2 (en) | 1980-04-25 | 1980-04-25 | How sputtering equipment works |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56152971A true JPS56152971A (en) | 1981-11-26 |
JPS6037871B2 JPS6037871B2 (en) | 1985-08-28 |
Family
ID=12968232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5435280A Expired JPS6037871B2 (en) | 1980-04-25 | 1980-04-25 | How sputtering equipment works |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6037871B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966121A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Exposing method of reaction chamber in atmosphere |
JPS60174242U (en) * | 1984-04-17 | 1985-11-19 | 株式会社日立国際電気 | Reactive ion etching equipment |
JPH02250962A (en) * | 1989-03-24 | 1990-10-08 | Nec Kyushu Ltd | Sputtering device |
JPH0319319A (en) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | Treater for member to be treated |
-
1980
- 1980-04-25 JP JP5435280A patent/JPS6037871B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966121A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Exposing method of reaction chamber in atmosphere |
JPS60174242U (en) * | 1984-04-17 | 1985-11-19 | 株式会社日立国際電気 | Reactive ion etching equipment |
JPH02250962A (en) * | 1989-03-24 | 1990-10-08 | Nec Kyushu Ltd | Sputtering device |
JPH0319319A (en) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | Treater for member to be treated |
Also Published As
Publication number | Publication date |
---|---|
JPS6037871B2 (en) | 1985-08-28 |
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