JPS56152971A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS56152971A
JPS56152971A JP5435280A JP5435280A JPS56152971A JP S56152971 A JPS56152971 A JP S56152971A JP 5435280 A JP5435280 A JP 5435280A JP 5435280 A JP5435280 A JP 5435280A JP S56152971 A JPS56152971 A JP S56152971A
Authority
JP
Japan
Prior art keywords
chamber
evacuated
treating
takeout
continued
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5435280A
Other languages
Japanese (ja)
Other versions
JPS6037871B2 (en
Inventor
Toshiaki Fujioka
Koyo Tsuchiya
Takenobu Fuda
Tomohisa Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP5435280A priority Critical patent/JPS6037871B2/en
Publication of JPS56152971A publication Critical patent/JPS56152971A/en
Publication of JPS6037871B2 publication Critical patent/JPS6037871B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obain a titled device which does not backflow atmospheric components and others into a treating chamber and can protect the inside of the treating chamber against contamination by so constituting the same that a sputtering gas is flowed from the inside of the treating chamber into a charging chamber and a takeout chamber while all the sluice valves are open.
CONSTITUTION: A charging chamber 1 and an intermediate heating chamber 5 housing substrates are evacuated by means of a vacuum pump 11. A takeout chamber 3 and an intermediate cooling chamber 8 are also evacuated in a similar manner. The inside of the chamber 3 once opens to the atmosphere, but next it is closed and the inside of the respective chambers 3, 8 is evacuated a vacuum pump 13. Further, a sputtering gas 13 is introduced ito a sputtering chamber 2, which is then evacuated by the pump 13 to create a gaseous atmosphere of a high vacuum. Next, sluice valves 4, 6, 9 are opened and the substrates in the chamber 1 are successively transferred into the chamber 5 and chamber 2 and the chamber 8 and chamber 3. The introduction of said gas into the chamber 2 is continued; at the same time, the evacuation from the chamber 1 and chamber 3 is continued, so that the flows going from the inside of the chamber 2 to the chamber 1 and the chamber 2 are produced. Hence, atmospheric components and others are prevented from being backflowed into the chamber 2 and the inside of said chamber is protected from contamination.
COPYRIGHT: (C)1981,JPO&Japio
JP5435280A 1980-04-25 1980-04-25 How sputtering equipment works Expired JPS6037871B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5435280A JPS6037871B2 (en) 1980-04-25 1980-04-25 How sputtering equipment works

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5435280A JPS6037871B2 (en) 1980-04-25 1980-04-25 How sputtering equipment works

Publications (2)

Publication Number Publication Date
JPS56152971A true JPS56152971A (en) 1981-11-26
JPS6037871B2 JPS6037871B2 (en) 1985-08-28

Family

ID=12968232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5435280A Expired JPS6037871B2 (en) 1980-04-25 1980-04-25 How sputtering equipment works

Country Status (1)

Country Link
JP (1) JPS6037871B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966121A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Exposing method of reaction chamber in atmosphere
JPS60174242U (en) * 1984-04-17 1985-11-19 株式会社日立国際電気 Reactive ion etching equipment
JPH02250962A (en) * 1989-03-24 1990-10-08 Nec Kyushu Ltd Sputtering device
JPH0319319A (en) * 1989-06-16 1991-01-28 Tokyo Erekutoron Kyushu Kk Treater for member to be treated

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966121A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Exposing method of reaction chamber in atmosphere
JPS60174242U (en) * 1984-04-17 1985-11-19 株式会社日立国際電気 Reactive ion etching equipment
JPH02250962A (en) * 1989-03-24 1990-10-08 Nec Kyushu Ltd Sputtering device
JPH0319319A (en) * 1989-06-16 1991-01-28 Tokyo Erekutoron Kyushu Kk Treater for member to be treated

Also Published As

Publication number Publication date
JPS6037871B2 (en) 1985-08-28

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