JPS561526A - Substrate holding jig for substrate treatment - Google Patents
Substrate holding jig for substrate treatmentInfo
- Publication number
- JPS561526A JPS561526A JP7612879A JP7612879A JPS561526A JP S561526 A JPS561526 A JP S561526A JP 7612879 A JP7612879 A JP 7612879A JP 7612879 A JP7612879 A JP 7612879A JP S561526 A JPS561526 A JP S561526A
- Authority
- JP
- Japan
- Prior art keywords
- substrate holding
- holding plate
- metal
- substrate
- carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To protect a substrate holding plate from wear due to etching and enable the repeated use of the plate, by fitting substrate holding metal hooks in the holes of the substrate holding plate made of a metal oxide or Si carbide. CONSTITUTION:A plurality of through holes 3 are provided in a substrate holding plate 1 made of a metal oxide or Si carbide. Substrate holding hooks made of a metal are attached to the holding plate 1 by the through holes 3. The holding plate is made of such a chemically stable substance of high melting point as the metal oxide (Al2O3, Ta2O5, etc.) or Si carbide (SiC etc.). The hooks 2 are made of the metal such as Pt which can be easily worked and is chemically stable and has a high metling point. In gas-phase deposit treatment, the substrate holding plate is not etched even if a deposit on the jig is etched off by hydrofluoric acid or a mixed solution of nitric acid with hydrofluoric acid. Therefore, the jig does not suffer from wear such as surface roughening.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7612879A JPS561526A (en) | 1979-06-15 | 1979-06-15 | Substrate holding jig for substrate treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7612879A JPS561526A (en) | 1979-06-15 | 1979-06-15 | Substrate holding jig for substrate treatment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS561526A true JPS561526A (en) | 1981-01-09 |
JPS6339093B2 JPS6339093B2 (en) | 1988-08-03 |
Family
ID=13596287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7612879A Granted JPS561526A (en) | 1979-06-15 | 1979-06-15 | Substrate holding jig for substrate treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS561526A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230923A (en) * | 1975-09-04 | 1977-03-09 | Osaka Gas Co Ltd | Burner with total use-hour indicator |
JPS622240U (en) * | 1985-06-20 | 1987-01-08 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0491583U (en) * | 1990-12-26 | 1992-08-10 | ||
JPH0491584U (en) * | 1990-12-26 | 1992-08-10 | ||
KR102581508B1 (en) * | 2021-08-27 | 2023-09-22 | 주식회사 디오 | manufacturing method of digital overdenture |
KR102590346B1 (en) * | 2021-08-27 | 2023-10-18 | 주식회사 디오 | manufacturing method of digital overdenture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5378765A (en) * | 1976-12-23 | 1978-07-12 | Toshiba Corp | Semiconductor wafer heating stand for gas phase growth |
JPS5464460U (en) * | 1977-10-14 | 1979-05-08 | ||
JPS5475661U (en) * | 1977-11-09 | 1979-05-29 |
-
1979
- 1979-06-15 JP JP7612879A patent/JPS561526A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5378765A (en) * | 1976-12-23 | 1978-07-12 | Toshiba Corp | Semiconductor wafer heating stand for gas phase growth |
JPS5464460U (en) * | 1977-10-14 | 1979-05-08 | ||
JPS5475661U (en) * | 1977-11-09 | 1979-05-29 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230923A (en) * | 1975-09-04 | 1977-03-09 | Osaka Gas Co Ltd | Burner with total use-hour indicator |
JPS5642805B2 (en) * | 1975-09-04 | 1981-10-07 | ||
JPS622240U (en) * | 1985-06-20 | 1987-01-08 | ||
JPH0513004Y2 (en) * | 1985-06-20 | 1993-04-06 |
Also Published As
Publication number | Publication date |
---|---|
JPS6339093B2 (en) | 1988-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT8019613A0 (en) | PROCESS FOR DEPOSITING METALLIC TRACES ON A CERAMIC SUBSTRATE WITHOUT THE USE OF MASKS. | |
MX170165B (en) | METHOD FOR COATING CERAMICS ON METALS | |
JPS561526A (en) | Substrate holding jig for substrate treatment | |
IN161186B (en) | ||
JPS53102628A (en) | Manufacture for parallel type stripe filter | |
JPS51119686A (en) | A method for forming a film on the metal surface | |
JPS52151555A (en) | Manufacture of luminous screen | |
JPS55134173A (en) | Etching method for aluminum or aluminum base alloy | |
JPS51140199A (en) | Crystal working process | |
JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
JPS5785978A (en) | Etching jig | |
JPS53101975A (en) | Treating method of semiconductor substrates | |
JPS545386A (en) | Surface processor for wafer | |
Morgan | Comment on" Reaction of Si sub 3 N sub 4 with Al sub 2 O sub 3 and Y sub 2 O sub 3" and" Silicon vttrium oxynitrides." | |
JPS547868A (en) | Manufacture for beam lead type semiconductor device | |
JPS5253296A (en) | Manufacturig process of resistant body for variable resistor | |
Mokrushin et al. | Annihilation of Positrons in Single Crystals of III-V Semiconductors | |
Tomandl | Statistical Theory of Particle Growth in Crystalline Ceramics Without Liquid Phase | |
FR2388056A1 (en) | Coating platinum or platinum alloy appts. - with refractory oxide to increase strength and working life of appts. at high temps. | |
JPS5424236A (en) | Etching solution and minute working process | |
JPS6417432A (en) | Etching method for semiconductor wafer | |
JPS5325350A (en) | Dicing method of semiconductor substrates | |
JPS5230790A (en) | Anode made of ceramics for electrolysis | |
JPS5488767A (en) | Manufacture for semiconductor element | |
JPS53133380A (en) | Manufacture of semiconductor element |