JPS56152262A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS56152262A
JPS56152262A JP5665080A JP5665080A JPS56152262A JP S56152262 A JPS56152262 A JP S56152262A JP 5665080 A JP5665080 A JP 5665080A JP 5665080 A JP5665080 A JP 5665080A JP S56152262 A JPS56152262 A JP S56152262A
Authority
JP
Japan
Prior art keywords
electrodes
type
layer
low
oxidizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5665080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155782B2 (enrdf_load_stackoverflow
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5665080A priority Critical patent/JPS56152262A/ja
Publication of JPS56152262A publication Critical patent/JPS56152262A/ja
Publication of JPS6155782B2 publication Critical patent/JPS6155782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP5665080A 1980-04-25 1980-04-25 Manufacture of semiconductor integrated circuit device Granted JPS56152262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5665080A JPS56152262A (en) 1980-04-25 1980-04-25 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5665080A JPS56152262A (en) 1980-04-25 1980-04-25 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56152262A true JPS56152262A (en) 1981-11-25
JPS6155782B2 JPS6155782B2 (enrdf_load_stackoverflow) 1986-11-29

Family

ID=13033229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5665080A Granted JPS56152262A (en) 1980-04-25 1980-04-25 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56152262A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128896U (enrdf_load_stackoverflow) * 1988-02-26 1989-09-01
JPH0331990A (ja) * 1989-06-28 1991-02-12 Matsushita Refrig Co Ltd カップ自動販売機のカートリッジタンク式給水装置

Also Published As

Publication number Publication date
JPS6155782B2 (enrdf_load_stackoverflow) 1986-11-29

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