JPS56150850A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS56150850A JPS56150850A JP5335080A JP5335080A JPS56150850A JP S56150850 A JPS56150850 A JP S56150850A JP 5335080 A JP5335080 A JP 5335080A JP 5335080 A JP5335080 A JP 5335080A JP S56150850 A JPS56150850 A JP S56150850A
- Authority
- JP
- Japan
- Prior art keywords
- oxidized film
- electrode
- base
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5335080A JPS56150850A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5335080A JPS56150850A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56150850A true JPS56150850A (en) | 1981-11-21 |
JPH0222544B2 JPH0222544B2 (US08066781-20111129-C00013.png) | 1990-05-18 |
Family
ID=12940322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5335080A Granted JPS56150850A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56150850A (US08066781-20111129-C00013.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5591656A (en) * | 1991-09-24 | 1997-01-07 | Matsushita Electronics Corporation, Ltd. | Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
-
1980
- 1980-04-22 JP JP5335080A patent/JPS56150850A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5591656A (en) * | 1991-09-24 | 1997-01-07 | Matsushita Electronics Corporation, Ltd. | Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
JPH0222544B2 (US08066781-20111129-C00013.png) | 1990-05-18 |
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