JPS56148786A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS56148786A
JPS56148786A JP4965780A JP4965780A JPS56148786A JP S56148786 A JPS56148786 A JP S56148786A JP 4965780 A JP4965780 A JP 4965780A JP 4965780 A JP4965780 A JP 4965780A JP S56148786 A JPS56148786 A JP S56148786A
Authority
JP
Japan
Prior art keywords
rom
ram
storage device
address space
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4965780A
Other languages
Japanese (ja)
Inventor
Hideaki Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4965780A priority Critical patent/JPS56148786A/en
Publication of JPS56148786A publication Critical patent/JPS56148786A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To permit ROM and RAM to coexist in the same address space by modifying some of memory cells, forming an RAM storage device, into ROM to be used. CONSTITUTION:Short-circuit line SL is connected to one part of an RAM cell forming a semiconductor RAM storage device to short-circuit one load resistance R2, and then storage contents via cross transistors T1 and T2 are fixed to form ROM cell MC11, so that ROM cells MC11... will coexit in the address space with RAM cells MC12, MC21, MC22.... Thus, the address space is utilized effectively and the operation speed of ROM is increased.
JP4965780A 1980-04-16 1980-04-16 Semiconductor storage device Pending JPS56148786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4965780A JPS56148786A (en) 1980-04-16 1980-04-16 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4965780A JPS56148786A (en) 1980-04-16 1980-04-16 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS56148786A true JPS56148786A (en) 1981-11-18

Family

ID=12837249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4965780A Pending JPS56148786A (en) 1980-04-16 1980-04-16 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS56148786A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100313514B1 (en) * 1999-05-11 2001-11-17 김영환 Hybrid memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100313514B1 (en) * 1999-05-11 2001-11-17 김영환 Hybrid memory device

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