JPS56140670A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS56140670A
JPS56140670A JP4421680A JP4421680A JPS56140670A JP S56140670 A JPS56140670 A JP S56140670A JP 4421680 A JP4421680 A JP 4421680A JP 4421680 A JP4421680 A JP 4421680A JP S56140670 A JPS56140670 A JP S56140670A
Authority
JP
Japan
Prior art keywords
gauge resistors
resistance values
diaphragm
resistance
absolute pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4421680A
Other languages
Japanese (ja)
Other versions
JPS6154271B2 (en
Inventor
Toru Shinmen
Mitsuhiko Asano
Hideaki Goshima
Hirokazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP4421680A priority Critical patent/JPS56140670A/en
Publication of JPS56140670A publication Critical patent/JPS56140670A/en
Publication of JPS6154271B2 publication Critical patent/JPS6154271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To decrease influences caused by temperature changes at the measurement of an absolute pressure by a method wherein resistance values in a strainless state are kept set in order that the resistance values of individual gauge resistors arranged on a diaphragm are made almost same within the range of the pressures used. CONSTITUTION:The gauge resistors R1-R4 by diffused layers are formed on, for example, the diaphragm 2 of an Si substrate 1 of a (100) surface azimuth, and an Si pedestal 4 is attached to the gauge resistors and the diaphragm 2 is made a vacuum chamber 3 on the rear to make the absolute pressure measuring sensor. The resistance values of the respective gauge resistors in the strainless state are designed and set up in such a manner that the group of R1, R3 increased in the resistance by being pressurized is made smaller as much as offset value at the use than the group of R2, R4 decreased in the resistance. Thereby, the resistance values of the respective gauge resistors within the range of the pressures used are made almost same, so that the absolute pressure slightly influences by the temperature changes can be measured.
JP4421680A 1980-04-04 1980-04-04 Semiconductor pressure sensor Granted JPS56140670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4421680A JPS56140670A (en) 1980-04-04 1980-04-04 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4421680A JPS56140670A (en) 1980-04-04 1980-04-04 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS56140670A true JPS56140670A (en) 1981-11-04
JPS6154271B2 JPS6154271B2 (en) 1986-11-21

Family

ID=12685341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4421680A Granted JPS56140670A (en) 1980-04-04 1980-04-04 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS56140670A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325982A (en) * 1986-07-18 1988-02-03 Nissan Motor Co Ltd Pressure transducer and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0535335Y2 (en) * 1986-02-21 1993-09-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325982A (en) * 1986-07-18 1988-02-03 Nissan Motor Co Ltd Pressure transducer and manufacture thereof

Also Published As

Publication number Publication date
JPS6154271B2 (en) 1986-11-21

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