JPS56135992A - Far infrared electromagnetic wave oscillator - Google Patents

Far infrared electromagnetic wave oscillator

Info

Publication number
JPS56135992A
JPS56135992A JP3971680A JP3971680A JPS56135992A JP S56135992 A JPS56135992 A JP S56135992A JP 3971680 A JP3971680 A JP 3971680A JP 3971680 A JP3971680 A JP 3971680A JP S56135992 A JPS56135992 A JP S56135992A
Authority
JP
Japan
Prior art keywords
junction
electromagnetic wave
far infrared
current
wave oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3971680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237895B2 (enExample
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3971680A priority Critical patent/JPS56135992A/ja
Priority to DE19813102930 priority patent/DE3102930A1/de
Priority to FR8101900A priority patent/FR2479586B1/fr
Priority to GB8102851A priority patent/GB2074780B/en
Publication of JPS56135992A publication Critical patent/JPS56135992A/ja
Priority to US06/521,226 priority patent/US4571727A/en
Publication of JPS6237895B2 publication Critical patent/JPS6237895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
JP3971680A 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator Granted JPS56135992A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3971680A JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator
DE19813102930 DE3102930A1 (de) 1980-03-27 1981-01-29 Generator fuer langwellige elektromagnetische infrarotwellen
FR8101900A FR2479586B1 (fr) 1980-03-27 1981-01-30 Generateur d'ondes electromagnetiques dans l'infrarouge lointain
GB8102851A GB2074780B (en) 1980-03-27 1981-01-30 Far-infrared electromagnetic wave generator
US06/521,226 US4571727A (en) 1980-03-27 1983-08-09 Far-infrared electromagnetic wave generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3971680A JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator

Publications (2)

Publication Number Publication Date
JPS56135992A true JPS56135992A (en) 1981-10-23
JPS6237895B2 JPS6237895B2 (enExample) 1987-08-14

Family

ID=12560705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3971680A Granted JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator

Country Status (1)

Country Link
JP (1) JPS56135992A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644089A (en) * 1987-06-26 1989-01-09 Kokusai Denshin Denwa Co Ltd Infrared semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644089A (en) * 1987-06-26 1989-01-09 Kokusai Denshin Denwa Co Ltd Infrared semiconductor laser

Also Published As

Publication number Publication date
JPS6237895B2 (enExample) 1987-08-14

Similar Documents

Publication Publication Date Title
US4627063A (en) Laser oscillator
JPS56135992A (en) Far infrared electromagnetic wave oscillator
JPS5795675A (en) Solar cell
JPS56135993A (en) Far infrared electromagnetic wave oscillator
JPS55124290A (en) Voiceless discharge type gas laser device
JPS56135991A (en) Far infrared electromagnetic wave oscillator
JPS5744485A (en) Laser welding method
DE58904793D1 (de) Gasentladungsstreckenanordnung mit einem oszillator.
JPS5642392A (en) Discharge of gas laser device
Gavrilov et al. Specific characteristics of the effect of UV laser radiation on the survival of microorganisms
JPS575434A (en) Output hybrid type solid-state relay
JPS57208185A (en) Lateral excitation type laser oscillator
JPS57202793A (en) Laser device
JPS55160485A (en) Silent discharge type laser
RU2035083C1 (ru) Устройство излучения световых волн
JPS5376333A (en) Power supply effective at power failure
Bernardini et al. Single-mode 30 MW CO2 laser system for 16 μm Raman scattering in parahydrogen
SU875653A1 (ru) Устройство дл управлени излучением в импульсном режиме
CHUNG The construction of a Nd: YAG laser and observation of the output[M. S. Thesis]
JPS55115385A (en) Laser device
JPS56137689A (en) Laser oscillator
VANORNUM et al. Electric arc light source having undercut recessed anode[Patent]
SU902637A1 (ru) Способ возбуждения разряда в проточном импульсно-периодическом газовом лазере
JPS6469077A (en) Gas laser equipment
Danelius et al. Monopulse picosecond tunable parametric optical generator with an energy conversion efficiency of not less than 50%