JPS6237895B2 - - Google Patents
Info
- Publication number
- JPS6237895B2 JPS6237895B2 JP3971680A JP3971680A JPS6237895B2 JP S6237895 B2 JPS6237895 B2 JP S6237895B2 JP 3971680 A JP3971680 A JP 3971680A JP 3971680 A JP3971680 A JP 3971680A JP S6237895 B2 JPS6237895 B2 JP S6237895B2
- Authority
- JP
- Japan
- Prior art keywords
- level
- junction
- excited
- impurity
- phonons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005684 electric field Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000003574 free electron Substances 0.000 description 6
- 230000005283 ground state Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WLNBMPZUVDTASE-HXIISURNSA-N (2r,3r,4s,5r)-2-amino-3,4,5,6-tetrahydroxyhexanal;sulfuric acid Chemical compound [O-]S([O-])(=O)=O.O=C[C@H]([NH3+])[C@@H](O)[C@H](O)[C@H](O)CO.O=C[C@H]([NH3+])[C@@H](O)[C@H](O)[C@H](O)CO WLNBMPZUVDTASE-HXIISURNSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3971680A JPS56135992A (en) | 1980-03-27 | 1980-03-27 | Far infrared electromagnetic wave oscillator |
| DE19813102930 DE3102930A1 (de) | 1980-03-27 | 1981-01-29 | Generator fuer langwellige elektromagnetische infrarotwellen |
| FR8101900A FR2479586B1 (fr) | 1980-03-27 | 1981-01-30 | Generateur d'ondes electromagnetiques dans l'infrarouge lointain |
| GB8102851A GB2074780B (en) | 1980-03-27 | 1981-01-30 | Far-infrared electromagnetic wave generator |
| US06/521,226 US4571727A (en) | 1980-03-27 | 1983-08-09 | Far-infrared electromagnetic wave generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3971680A JPS56135992A (en) | 1980-03-27 | 1980-03-27 | Far infrared electromagnetic wave oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56135992A JPS56135992A (en) | 1981-10-23 |
| JPS6237895B2 true JPS6237895B2 (enExample) | 1987-08-14 |
Family
ID=12560705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3971680A Granted JPS56135992A (en) | 1980-03-27 | 1980-03-27 | Far infrared electromagnetic wave oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56135992A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2529854B2 (ja) * | 1987-06-26 | 1996-09-04 | 国際電信電話株式会社 | 赤外半導体レ−ザ |
-
1980
- 1980-03-27 JP JP3971680A patent/JPS56135992A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56135992A (en) | 1981-10-23 |
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