JPS56134774A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56134774A
JPS56134774A JP3837580A JP3837580A JPS56134774A JP S56134774 A JPS56134774 A JP S56134774A JP 3837580 A JP3837580 A JP 3837580A JP 3837580 A JP3837580 A JP 3837580A JP S56134774 A JPS56134774 A JP S56134774A
Authority
JP
Japan
Prior art keywords
gate
implanted
mon
ions
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3837580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6239833B2 (enrdf_load_stackoverflow
Inventor
Kohei Higuchi
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3837580A priority Critical patent/JPS56134774A/ja
Publication of JPS56134774A publication Critical patent/JPS56134774A/ja
Publication of JPS6239833B2 publication Critical patent/JPS6239833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3837580A 1980-03-26 1980-03-26 Manufacture of semiconductor device Granted JPS56134774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3837580A JPS56134774A (en) 1980-03-26 1980-03-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3837580A JPS56134774A (en) 1980-03-26 1980-03-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56134774A true JPS56134774A (en) 1981-10-21
JPS6239833B2 JPS6239833B2 (enrdf_load_stackoverflow) 1987-08-25

Family

ID=12523528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3837580A Granted JPS56134774A (en) 1980-03-26 1980-03-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56134774A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145694A (ja) * 1983-12-16 1985-08-01 エステイ−シ−　ピ−エルシ− 光増幅器及び増幅方法
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145694A (ja) * 1983-12-16 1985-08-01 エステイ−シ−　ピ−エルシ− 光増幅器及び増幅方法
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6239833B2 (enrdf_load_stackoverflow) 1987-08-25

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