JPS56131963A - Electric field effect transistor and its preparation - Google Patents
Electric field effect transistor and its preparationInfo
- Publication number
- JPS56131963A JPS56131963A JP3546580A JP3546580A JPS56131963A JP S56131963 A JPS56131963 A JP S56131963A JP 3546580 A JP3546580 A JP 3546580A JP 3546580 A JP3546580 A JP 3546580A JP S56131963 A JPS56131963 A JP S56131963A
- Authority
- JP
- Japan
- Prior art keywords
- source electrode
- selectively
- substrate
- concave
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005685 electric field effect Effects 0.000 title 1
- 239000010931 gold Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000007747 plating Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To enhance the electric characteristics by a method wherein source and drain electrodes are arranged alternately on an active layer on semi-insulating substrate, gate electrode is formed at source electrode side from the center of active layer concave, while a thick gold plating is applied on the source electrode part connecting with the substrate penetrating through the active layer to improve heat dissipating. CONSTITUTION:An N epitaxial layer 32 is placed on semi-insulating GaAs 31 and an opening 34 is provided to SiO2 33 of the surface to make a concave by etching, and further an inpedenent mesa 32 is formed by selectively opening and etching. An AuGeNi alloy source electrode 35 or drain electrode 36 is formed selectively. Heat-treatment is applied in H2 to lower contact resistance and a thick Au plating 37 is applied on source electrode 35 only selectively. Next, when oblique evaporation 41 of Mo and Au in order are applied, gate electrode 38 is formed at the location closer to the side of source electrode 35 from the center of the concave through an opening 34. Removing the film 41 selectively to form pads 39 and 40, eliminating substrate 31 by polishing to expose plating layer 37, applying thick Au plate 42 to the thinly formed substrate 31 and fitting a cooling board 42, the process is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3546580A JPS56131963A (en) | 1980-03-19 | 1980-03-19 | Electric field effect transistor and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3546580A JPS56131963A (en) | 1980-03-19 | 1980-03-19 | Electric field effect transistor and its preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56131963A true JPS56131963A (en) | 1981-10-15 |
| JPS6250991B2 JPS6250991B2 (en) | 1987-10-28 |
Family
ID=12442527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3546580A Granted JPS56131963A (en) | 1980-03-19 | 1980-03-19 | Electric field effect transistor and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56131963A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117171A (en) * | 1982-12-23 | 1984-07-06 | Nec Corp | High-frequency high-output field-effect transistor |
-
1980
- 1980-03-19 JP JP3546580A patent/JPS56131963A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117171A (en) * | 1982-12-23 | 1984-07-06 | Nec Corp | High-frequency high-output field-effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6250991B2 (en) | 1987-10-28 |
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