JPS56130961A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56130961A
JPS56130961A JP3364580A JP3364580A JPS56130961A JP S56130961 A JPS56130961 A JP S56130961A JP 3364580 A JP3364580 A JP 3364580A JP 3364580 A JP3364580 A JP 3364580A JP S56130961 A JPS56130961 A JP S56130961A
Authority
JP
Japan
Prior art keywords
layer
mask
matching
mask pattern
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3364580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0140502B2 (enrdf_load_stackoverflow
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3364580A priority Critical patent/JPS56130961A/ja
Publication of JPS56130961A publication Critical patent/JPS56130961A/ja
Publication of JPH0140502B2 publication Critical patent/JPH0140502B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP3364580A 1980-03-17 1980-03-17 Manufacture of semiconductor device Granted JPS56130961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3364580A JPS56130961A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3364580A JPS56130961A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56130961A true JPS56130961A (en) 1981-10-14
JPH0140502B2 JPH0140502B2 (enrdf_load_stackoverflow) 1989-08-29

Family

ID=12392174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3364580A Granted JPS56130961A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130961A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108755A (ja) * 1989-09-22 1991-05-08 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108755A (ja) * 1989-09-22 1991-05-08 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0140502B2 (enrdf_load_stackoverflow) 1989-08-29

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