JPS56126937A - Cutting apparatus for semiconductor wafer - Google Patents
Cutting apparatus for semiconductor waferInfo
- Publication number
- JPS56126937A JPS56126937A JP3052780A JP3052780A JPS56126937A JP S56126937 A JPS56126937 A JP S56126937A JP 3052780 A JP3052780 A JP 3052780A JP 3052780 A JP3052780 A JP 3052780A JP S56126937 A JPS56126937 A JP S56126937A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- stage
- cutting
- preventing
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3052780A JPS56126937A (en) | 1980-03-11 | 1980-03-11 | Cutting apparatus for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3052780A JPS56126937A (en) | 1980-03-11 | 1980-03-11 | Cutting apparatus for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56126937A true JPS56126937A (en) | 1981-10-05 |
Family
ID=12306271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3052780A Pending JPS56126937A (en) | 1980-03-11 | 1980-03-11 | Cutting apparatus for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56126937A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6030314A (ja) * | 1983-07-08 | 1985-02-15 | 富士通株式会社 | ダイシング装置 |
EP0134606A2 (en) * | 1983-08-03 | 1985-03-20 | National Starch and Chemical Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers |
JPS61144648U (ja) * | 1985-02-27 | 1986-09-06 | ||
US5461008A (en) * | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
KR100537494B1 (ko) * | 2003-10-02 | 2005-12-19 | (주)한빛레이저 | 계면활성제 도포 방법을 이용한 실리콘 웨이퍼의 레이저 절단 방법 |
-
1980
- 1980-03-11 JP JP3052780A patent/JPS56126937A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6030314A (ja) * | 1983-07-08 | 1985-02-15 | 富士通株式会社 | ダイシング装置 |
JPH0145978B2 (ja) * | 1983-07-08 | 1989-10-05 | Fujitsu Ltd | |
EP0134606A2 (en) * | 1983-08-03 | 1985-03-20 | National Starch and Chemical Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers |
JPS61144648U (ja) * | 1985-02-27 | 1986-09-06 | ||
US5461008A (en) * | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
KR100537494B1 (ko) * | 2003-10-02 | 2005-12-19 | (주)한빛레이저 | 계면활성제 도포 방법을 이용한 실리콘 웨이퍼의 레이저 절단 방법 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57113289A (en) | Semiconductor device and its manufacture | |
JPS56126937A (en) | Cutting apparatus for semiconductor wafer | |
JPS5643740A (en) | Semiconductor wafer | |
JPS5441665A (en) | Manufacture for semiconductor device | |
JPS5412563A (en) | Fabricating method of semiconductor crystals | |
JPS52141178A (en) | Production of semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS5572055A (en) | Preparation of semiconductor device | |
JPS5386158A (en) | Production of semiconductor device | |
JPS54107286A (en) | Production of semiconductor junction laser element | |
JPS54136173A (en) | Semiconductor device | |
JPS5376743A (en) | Cutting method of semiconductor substrate | |
JPS5487169A (en) | Dicing method for wafer | |
JPS5377462A (en) | Production of semiconductor device | |
JPS52154373A (en) | Production of semiconductor device | |
JPS51112179A (en) | Processing method of the semiconductor | |
JPS5399869A (en) | Dividing method for semiconductor pellet | |
JPS5323565A (en) | Production of bump semiconductor device | |
JPS5527684A (en) | Manufacturing method of semiconductor device | |
JPS5415670A (en) | Manufacture of semiconductor device | |
JPS5572054A (en) | Preparation of semiconductor device | |
JPS6428827A (en) | Manufacture of semiconductor device | |
JPS54121081A (en) | Integrated circuit device | |
JPS5678125A (en) | Manufacture of semiconductor device | |
EP0320090A3 (en) | Shaping silicon semiconductor wafers |