JPS56126917A - Diffusing method for impurity to compound semiconductor - Google Patents

Diffusing method for impurity to compound semiconductor

Info

Publication number
JPS56126917A
JPS56126917A JP3125080A JP3125080A JPS56126917A JP S56126917 A JPS56126917 A JP S56126917A JP 3125080 A JP3125080 A JP 3125080A JP 3125080 A JP3125080 A JP 3125080A JP S56126917 A JPS56126917 A JP S56126917A
Authority
JP
Japan
Prior art keywords
zn2p3
pressure
gaas1
xpx
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3125080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6145374B2 (OSRAM
Inventor
Hiroshi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP3125080A priority Critical patent/JPS56126917A/ja
Publication of JPS56126917A publication Critical patent/JPS56126917A/ja
Publication of JPS6145374B2 publication Critical patent/JPS6145374B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material

Landscapes

  • Led Devices (AREA)
JP3125080A 1980-03-12 1980-03-12 Diffusing method for impurity to compound semiconductor Granted JPS56126917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3125080A JPS56126917A (en) 1980-03-12 1980-03-12 Diffusing method for impurity to compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3125080A JPS56126917A (en) 1980-03-12 1980-03-12 Diffusing method for impurity to compound semiconductor

Publications (2)

Publication Number Publication Date
JPS56126917A true JPS56126917A (en) 1981-10-05
JPS6145374B2 JPS6145374B2 (OSRAM) 1986-10-07

Family

ID=12326112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3125080A Granted JPS56126917A (en) 1980-03-12 1980-03-12 Diffusing method for impurity to compound semiconductor

Country Status (1)

Country Link
JP (1) JPS56126917A (OSRAM)

Also Published As

Publication number Publication date
JPS6145374B2 (OSRAM) 1986-10-07

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