JPS56124274A - Serial connecting combination of 22terminal semiconductor device and method of forming same - Google Patents

Serial connecting combination of 22terminal semiconductor device and method of forming same

Info

Publication number
JPS56124274A
JPS56124274A JP16012680A JP16012680A JPS56124274A JP S56124274 A JPS56124274 A JP S56124274A JP 16012680 A JP16012680 A JP 16012680A JP 16012680 A JP16012680 A JP 16012680A JP S56124274 A JPS56124274 A JP S56124274A
Authority
JP
Japan
Prior art keywords
22terminal
semiconductor device
forming same
serial connecting
connecting combination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16012680A
Other languages
English (en)
Inventor
Booru Jiefuri
Ariguzuaanda Dedoman Hari
Gurahamu Sumisu Jiyon
Chiyaaruzu Buoukesu Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of JPS56124274A publication Critical patent/JPS56124274A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP16012680A 1979-11-15 1980-11-15 Serial connecting combination of 22terminal semiconductor device and method of forming same Pending JPS56124274A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7939564 1979-11-15

Publications (1)

Publication Number Publication Date
JPS56124274A true JPS56124274A (en) 1981-09-29

Family

ID=10509219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16012680A Pending JPS56124274A (en) 1979-11-15 1980-11-15 Serial connecting combination of 22terminal semiconductor device and method of forming same

Country Status (5)

Country Link
US (1) US4339870A (ja)
EP (1) EP0029334B1 (ja)
JP (1) JPS56124274A (ja)
CA (1) CA1150852A (ja)
DE (1) DE3067381D1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111584A (ja) * 1984-07-13 1986-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド モノリシツク半導体構造とその製法
JPS61111574A (ja) * 1984-07-13 1986-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド モノリシツク半導体構造とその製法

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100925B (en) * 1981-06-25 1985-06-05 Standard Telephones Cables Ltd Fabricating integrated circuits
US5144413A (en) * 1981-11-23 1992-09-01 Raytheon Company Semiconductor structures and manufacturing methods
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
JPS62194652A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置
US4894114A (en) * 1987-02-11 1990-01-16 Westinghouse Electric Corp. Process for producing vias in semiconductor
US4747908A (en) * 1987-04-09 1988-05-31 Microelectronics and Computer Technologogy Corporation Method of making a hermetically sealed multilayer electrical feedthru
DE3718683A1 (de) * 1987-06-04 1988-12-22 Licentia Gmbh Verfahren zum herstellen eines beidseitig kontaktierbaren halbleiterbauelements
US4896205A (en) * 1987-07-14 1990-01-23 Rockwell International Corporation Compact reduced parasitic resonant frequency pulsed power source at microwave frequencies
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
JPH0344067A (ja) * 1989-07-11 1991-02-25 Nec Corp 半導体基板の積層方法
FR2666173A1 (fr) * 1990-08-21 1992-02-28 Thomson Csf Structure hybride d'interconnexion de circuits integres et procede de fabrication.
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.
FR2684800B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs avec recuperation de substrat par voie electrochimique.
US5827751A (en) * 1991-12-06 1998-10-27 Picogiga Societe Anonyme Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically
US5309003A (en) * 1992-02-28 1994-05-03 At&T Bell Laboratories Article comprising a real space transfer semiconductor device, and method of making the article
US5236871A (en) * 1992-04-29 1993-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing a hybridization of detector array and integrated circuit for readout
US5521420A (en) * 1992-05-27 1996-05-28 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
WO1995026569A1 (en) * 1992-05-27 1995-10-05 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5385632A (en) * 1993-06-25 1995-01-31 At&T Laboratories Method for manufacturing integrated semiconductor devices
GB9401770D0 (en) * 1994-01-31 1994-03-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuits
JPH07307306A (ja) * 1994-05-10 1995-11-21 Nissan Motor Co Ltd 半導体装置の製造方法
US5656547A (en) * 1994-05-11 1997-08-12 Chipscale, Inc. Method for making a leadless surface mounted device with wrap-around flange interface contacts
JPH10508430A (ja) * 1994-06-09 1998-08-18 チップスケール・インコーポレーテッド 抵抗器の製造
JPH0831791A (ja) * 1994-07-11 1996-02-02 Mitsubishi Electric Corp 半導体層の製造方法
JP2669413B2 (ja) * 1995-09-28 1997-10-27 日本電気株式会社 電子部品の実装構造
US5627112A (en) * 1995-11-13 1997-05-06 Rockwell International Corporation Method of making suspended microstructures
US5904496A (en) 1997-01-24 1999-05-18 Chipscale, Inc. Wafer fabrication of inside-wrapped contacts for electronic devices
JPH11150185A (ja) * 1997-11-14 1999-06-02 Nippon Steel Corp 半導体装置及びその製造方法
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
FR2793953B1 (fr) 1999-05-21 2002-08-09 Thomson Csf Capacite thermique pour composant electronique fonctionnant en impulsions longues
JP4465745B2 (ja) * 1999-07-23 2010-05-19 ソニー株式会社 半導体積層基板，半導体結晶基板および半導体素子ならびにそれらの製造方法
US6287891B1 (en) 2000-04-05 2001-09-11 Hrl Laboratories, Llc Method for transferring semiconductor device layers to different substrates
US6730990B2 (en) * 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
ATE385041T1 (de) * 2000-12-13 2008-02-15 Infineon Technologies Ag Verfahren zur mehrschrittigen bearbeitung eines dünnen und unter den bearbeitungsschritten bruchgefährdeten halbleiter-waferprodukts
CN100401535C (zh) * 2004-01-07 2008-07-09 洲磊科技股份有限公司 形成具有金属基板的发光二极管的方法
KR101536306B1 (ko) * 2008-10-24 2015-07-14 동국대학교 산학협력단 트렌치 기법을 이용한 2단자 반도체 소자 제작 방법
US9633982B2 (en) * 2015-02-17 2017-04-25 Chun Yen Chang Method of manufacturing semiconductor device array

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489961A (en) * 1966-09-29 1970-01-13 Fairchild Camera Instr Co Mesa etching for isolation of functional elements in integrated circuits
US3740617A (en) * 1968-11-20 1973-06-19 Matsushita Electronics Corp Semiconductor structure and method of manufacturing same
JPS5012995B1 (ja) * 1970-02-09 1975-05-16
US3649881A (en) * 1970-08-31 1972-03-14 Rca Corp High-power semiconductor device assembly
US3721593A (en) * 1971-08-13 1973-03-20 Motorola Inc Etch stop for koh anisotropic etch
US4189342A (en) * 1971-10-07 1980-02-19 U.S. Philips Corporation Semiconductor device comprising projecting contact layers
JPS49131863U (ja) * 1973-03-10 1974-11-13
US3902095A (en) * 1973-10-09 1975-08-26 Raytheon Co Electron beam semiconductor amplifier with shielded diode junctions
GB1480592A (en) * 1973-11-02 1977-07-20 Marconi Co Ltd Light emitting diodes
US3979820A (en) * 1974-10-30 1976-09-14 General Electric Company Deep diode lead throughs
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US4106052A (en) * 1975-04-19 1978-08-08 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor rectifier unit having a base plate with means for maintaining insulating wafers in a desired position
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
FR2373879A1 (fr) * 1976-12-07 1978-07-07 Thomson Csf Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure
US4197551A (en) * 1977-09-14 1980-04-08 Raytheon Company Semiconductor device having improved Schottky-barrier junction
US4241360A (en) * 1978-08-10 1980-12-23 Galileo Electro-Optics Corp. Series capacitor voltage multiplier circuit with top connected rectifiers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111584A (ja) * 1984-07-13 1986-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド モノリシツク半導体構造とその製法
JPS61111574A (ja) * 1984-07-13 1986-05-29 テキサス　インスツルメンツ　インコ−ポレイテツド モノリシツク半導体構造とその製法

Also Published As

Publication number Publication date
US4339870A (en) 1982-07-20
EP0029334B1 (en) 1984-04-04
DE3067381D1 (en) 1984-05-10
EP0029334A1 (en) 1981-05-27
CA1150852A (en) 1983-07-26

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