JPS56124262A - Waveguide passage light detecting device - Google Patents

Waveguide passage light detecting device

Info

Publication number
JPS56124262A
JPS56124262A JP2613580A JP2613580A JPS56124262A JP S56124262 A JPS56124262 A JP S56124262A JP 2613580 A JP2613580 A JP 2613580A JP 2613580 A JP2613580 A JP 2613580A JP S56124262 A JPS56124262 A JP S56124262A
Authority
JP
Japan
Prior art keywords
waveguide passage
wave
light
lambdag
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2613580A
Other languages
Japanese (ja)
Other versions
JPH0130092B2 (en
Inventor
Nobuhiko Mizushima
Takayuki Sugata
Yoshihito Amamiya
Seizo Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2613580A priority Critical patent/JPS56124262A/en
Publication of JPS56124262A publication Critical patent/JPS56124262A/en
Publication of JPH0130092B2 publication Critical patent/JPH0130092B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To make it possible to detect wave length above 2mum at a temperature below room temperature, by arranging plural electrodes on photo waveguide passage on a semiconductor substrate in such a manner as to be mutually connected and taking out on an outside circuit between the substrates a current based on the light propagating the waveguide passage. CONSTITUTION:As refractive index of a semiconductor layer 2 is higher than a substrate 2 and an insulating membrane 3, a photo waveguide passage is formed, and by applying light from an end surface 6 and reflecting it on the other end, a constant wave is formed on the layer 2. By setting propagation wave length to lambdag, an electrode, whose length is: l0=(m0+k)lambdag, is provided on the waveguide passage 2. In this case, m0 is to be 0 or an integral number, that is, 1/4<k<3/4. In an outside circuit, in which m1 pieces of electrodes are arranged at intervals: l=(m+ delta)lambdag (m is to be 0 or an integral number: 0<=delta<1/4mt), m1 pieces are joined together to be connected to an electrode for outside connection, and an electronic current ip, which is accelerated (arrow) following a field strength E1 of a light wave in the waveguide passage 2, is taken out in the outside circuit connected between the substrates. It is possible to obtain a wave-length-dependent output current and to detect at normal temperature a light having a wave length of 10nm.
JP2613580A 1980-03-04 1980-03-04 Waveguide passage light detecting device Granted JPS56124262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2613580A JPS56124262A (en) 1980-03-04 1980-03-04 Waveguide passage light detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2613580A JPS56124262A (en) 1980-03-04 1980-03-04 Waveguide passage light detecting device

Publications (2)

Publication Number Publication Date
JPS56124262A true JPS56124262A (en) 1981-09-29
JPH0130092B2 JPH0130092B2 (en) 1989-06-16

Family

ID=12185104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2613580A Granted JPS56124262A (en) 1980-03-04 1980-03-04 Waveguide passage light detecting device

Country Status (1)

Country Link
JP (1) JPS56124262A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349350A (en) * 2003-05-20 2004-12-09 Nippon Telegr & Teleph Corp <Ntt> Photodetector and silicon optical waveguide with built-in photodetector
JP2006113201A (en) * 2004-10-13 2006-04-27 Kyocera Corp Optical waveguide and optical waveguide substrate
JP2006126369A (en) * 2004-10-27 2006-05-18 Sony Corp Clock signal supplying device, semiconductor device using same, and electronic appliance
JP2019041079A (en) * 2017-08-29 2019-03-14 株式会社豊田中央研究所 Light-receiving element
EP4261506A1 (en) * 2022-04-12 2023-10-18 Eidgenössische Materialprüfungs- und Forschungsanstalt Component for building a miniaturized spectrometer and method for using it

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2879287B1 (en) * 2004-12-15 2007-03-16 Univ Grenoble 1 INTERFERENTIAL SPEECTROSCOPIC DETECTOR AND CAMERA
FR2889587B1 (en) * 2005-08-08 2008-02-22 Univ Grenoble 1 SPRAY SPRAY WITH CONTRA-PROPAGATIVE WAVE

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349350A (en) * 2003-05-20 2004-12-09 Nippon Telegr & Teleph Corp <Ntt> Photodetector and silicon optical waveguide with built-in photodetector
JP2006113201A (en) * 2004-10-13 2006-04-27 Kyocera Corp Optical waveguide and optical waveguide substrate
JP2006126369A (en) * 2004-10-27 2006-05-18 Sony Corp Clock signal supplying device, semiconductor device using same, and electronic appliance
JP2019041079A (en) * 2017-08-29 2019-03-14 株式会社豊田中央研究所 Light-receiving element
EP4261506A1 (en) * 2022-04-12 2023-10-18 Eidgenössische Materialprüfungs- und Forschungsanstalt Component for building a miniaturized spectrometer and method for using it
WO2023198358A1 (en) * 2022-04-12 2023-10-19 Eidgenössische Materialprüfungs- Und Forschungsanstalt Component for building a miniaturized spectrometer and method for using it

Also Published As

Publication number Publication date
JPH0130092B2 (en) 1989-06-16

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