JPS56118349A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56118349A JPS56118349A JP2143780A JP2143780A JPS56118349A JP S56118349 A JPS56118349 A JP S56118349A JP 2143780 A JP2143780 A JP 2143780A JP 2143780 A JP2143780 A JP 2143780A JP S56118349 A JPS56118349 A JP S56118349A
- Authority
- JP
- Japan
- Prior art keywords
- oxidized film
- layer
- gate
- electrode
- stacked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 101000617707 Homo sapiens Pregnancy-specific beta-1-glycoprotein 11 Proteins 0.000 abstract 1
- 101000617728 Homo sapiens Pregnancy-specific beta-1-glycoprotein 9 Proteins 0.000 abstract 1
- 102100021983 Pregnancy-specific beta-1-glycoprotein 9 Human genes 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2143780A JPS56118349A (en) | 1980-02-22 | 1980-02-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2143780A JPS56118349A (en) | 1980-02-22 | 1980-02-22 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56118349A true JPS56118349A (en) | 1981-09-17 |
Family
ID=12054940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2143780A Pending JPS56118349A (en) | 1980-02-22 | 1980-02-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56118349A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0162460A2 (en) * | 1984-05-22 | 1985-11-27 | Nec Corporation | Integrated circuit with an input protective device |
JPS62200767A (ja) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos型半導体装置 |
FR2617642A1 (fr) * | 1987-06-30 | 1989-01-06 | Thomson Semiconducteurs | Transistor a effet de champ |
EP0692826A3 (en) * | 1994-07-12 | 1997-10-01 | Ibm | Method for suppressing sub-threshold leaks due to sharp corners of insulation in submicron FET structures |
EP0800216A2 (en) * | 1996-04-04 | 1997-10-08 | International Business Machines Corporation | Transistor gate to minimize agglomeration defect sensitivity |
JP2001156268A (ja) * | 1999-11-25 | 2001-06-08 | Hitachi Ltd | 半導体集積回路装置 |
KR20030058438A (ko) * | 2001-12-31 | 2003-07-07 | 동부전자 주식회사 | 반도체 소자의 워드 라인 및 그 제조 방법 |
-
1980
- 1980-02-22 JP JP2143780A patent/JPS56118349A/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0162460A2 (en) * | 1984-05-22 | 1985-11-27 | Nec Corporation | Integrated circuit with an input protective device |
JPS62200767A (ja) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos型半導体装置 |
EP0239250A2 (en) * | 1986-02-28 | 1987-09-30 | Kabushiki Kaisha Toshiba | Short channel MOS transistor |
FR2617642A1 (fr) * | 1987-06-30 | 1989-01-06 | Thomson Semiconducteurs | Transistor a effet de champ |
EP0692826A3 (en) * | 1994-07-12 | 1997-10-01 | Ibm | Method for suppressing sub-threshold leaks due to sharp corners of insulation in submicron FET structures |
EP0800216A2 (en) * | 1996-04-04 | 1997-10-08 | International Business Machines Corporation | Transistor gate to minimize agglomeration defect sensitivity |
EP0800216A3 (en) * | 1996-04-04 | 1998-10-07 | International Business Machines Corporation | Transistor gate to minimize agglomeration defect sensitivity |
JP2001156268A (ja) * | 1999-11-25 | 2001-06-08 | Hitachi Ltd | 半導体集積回路装置 |
KR20030058438A (ko) * | 2001-12-31 | 2003-07-07 | 동부전자 주식회사 | 반도체 소자의 워드 라인 및 그 제조 방법 |
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