JPS56115530A - Manufacture of flip chip type semiconductor device - Google Patents

Manufacture of flip chip type semiconductor device

Info

Publication number
JPS56115530A
JPS56115530A JP1798380A JP1798380A JPS56115530A JP S56115530 A JPS56115530 A JP S56115530A JP 1798380 A JP1798380 A JP 1798380A JP 1798380 A JP1798380 A JP 1798380A JP S56115530 A JPS56115530 A JP S56115530A
Authority
JP
Japan
Prior art keywords
electrode
flip chip
chip type
supplementary
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1798380A
Other languages
Japanese (ja)
Inventor
Michihiro Kobiki
Manabu Watase
Yasuro Mitsui
Mutsuyuki Otsubo
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1798380A priority Critical patent/JPS56115530A/en
Publication of JPS56115530A publication Critical patent/JPS56115530A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain the electrode connecting method of an excellent mass producibility for the subject semiconductor device by a method wherein the electrode of the flip chip type semiconductor device is pressure welded to the supplementary electrode which has been formed in such manner that the relations of the electrode positions are coincided with each other in advance. CONSTITUTION:The supplementary electrode 18, which has been formed in advance in such manner that its positional relations are corresponding respectively to a thick-plated source electrode 6, a thick-plated drain electrode 7 and a thick- plated gate electrode 8 of a flip chip type GaAs FET chip 9, is placed on a support 17. Then, after the flip chip type GaAs FET9 has been placed on the supplementary electrode 18, the electrode 18 is pressure welded on the plated electrodes 6, 7 and 8. Lastly, the excessive supplementary electrode 18 is cut off. By using a unitary-body supplementary electrode, the process to precisely arrange each supplementary electrode of source, gate and drain is omitted, and the mass productivity can be improved.
JP1798380A 1980-02-15 1980-02-15 Manufacture of flip chip type semiconductor device Pending JPS56115530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1798380A JPS56115530A (en) 1980-02-15 1980-02-15 Manufacture of flip chip type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1798380A JPS56115530A (en) 1980-02-15 1980-02-15 Manufacture of flip chip type semiconductor device

Publications (1)

Publication Number Publication Date
JPS56115530A true JPS56115530A (en) 1981-09-10

Family

ID=11958947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1798380A Pending JPS56115530A (en) 1980-02-15 1980-02-15 Manufacture of flip chip type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56115530A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4869471A (en) * 1971-12-22 1973-09-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4869471A (en) * 1971-12-22 1973-09-20

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