JPS56111273A - Semiconductor photodetecting device - Google Patents

Semiconductor photodetecting device

Info

Publication number
JPS56111273A
JPS56111273A JP1389880A JP1389880A JPS56111273A JP S56111273 A JPS56111273 A JP S56111273A JP 1389880 A JP1389880 A JP 1389880A JP 1389880 A JP1389880 A JP 1389880A JP S56111273 A JPS56111273 A JP S56111273A
Authority
JP
Japan
Prior art keywords
light
layer
type
impurity
transparency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1389880A
Other languages
English (en)
Other versions
JPS6222473B2 (ja
Inventor
Takayuki Sugata
Yoshihito Amamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1389880A priority Critical patent/JPS56111273A/ja
Publication of JPS56111273A publication Critical patent/JPS56111273A/ja
Publication of JPS6222473B2 publication Critical patent/JPS6222473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP1389880A 1980-02-07 1980-02-07 Semiconductor photodetecting device Granted JPS56111273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1389880A JPS56111273A (en) 1980-02-07 1980-02-07 Semiconductor photodetecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1389880A JPS56111273A (en) 1980-02-07 1980-02-07 Semiconductor photodetecting device

Publications (2)

Publication Number Publication Date
JPS56111273A true JPS56111273A (en) 1981-09-02
JPS6222473B2 JPS6222473B2 (ja) 1987-05-18

Family

ID=11845981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1389880A Granted JPS56111273A (en) 1980-02-07 1980-02-07 Semiconductor photodetecting device

Country Status (1)

Country Link
JP (1) JPS56111273A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154085A (ja) * 1984-12-26 1986-07-12 Fujitsu Ltd 半導体受光装置
JPS61270878A (ja) * 1985-05-25 1986-12-01 Fujitsu Ltd 光半導体装置
JPS6220382A (ja) * 1985-07-18 1987-01-28 Fujitsu Ltd 光半導体装置
JPS62159477A (ja) * 1986-01-08 1987-07-15 Fujitsu Ltd 光半導体装置
EP0252414A2 (en) * 1986-07-08 1988-01-13 International Business Machines Corporation Schottky barrier semiconductor photodetector
WO2009078809A1 (en) * 2007-12-18 2009-06-25 Michalewicz Marek T Quantum tunneling photodetector array

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154085A (ja) * 1984-12-26 1986-07-12 Fujitsu Ltd 半導体受光装置
JPS61270878A (ja) * 1985-05-25 1986-12-01 Fujitsu Ltd 光半導体装置
JPS6220382A (ja) * 1985-07-18 1987-01-28 Fujitsu Ltd 光半導体装置
JPS62159477A (ja) * 1986-01-08 1987-07-15 Fujitsu Ltd 光半導体装置
EP0252414A2 (en) * 1986-07-08 1988-01-13 International Business Machines Corporation Schottky barrier semiconductor photodetector
JPS6319881A (ja) * 1986-07-08 1988-01-27 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体光検出器
JPH0552070B2 (ja) * 1986-07-08 1993-08-04 Ibm
WO2009078809A1 (en) * 2007-12-18 2009-06-25 Michalewicz Marek T Quantum tunneling photodetector array
US8552358B2 (en) 2007-12-18 2013-10-08 Marek T. Michalewicz Quantum tunneling photodetector array including electrode nano wires

Also Published As

Publication number Publication date
JPS6222473B2 (ja) 1987-05-18

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