JPS56110257A - Differential-type transistor circuit device - Google Patents

Differential-type transistor circuit device

Info

Publication number
JPS56110257A
JPS56110257A JP1265680A JP1265680A JPS56110257A JP S56110257 A JPS56110257 A JP S56110257A JP 1265680 A JP1265680 A JP 1265680A JP 1265680 A JP1265680 A JP 1265680A JP S56110257 A JPS56110257 A JP S56110257A
Authority
JP
Japan
Prior art keywords
layers
type
base
layer
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1265680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626658B2 (enrdf_load_html_response
Inventor
Shoichi Shimizu
Kenichi Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1265680A priority Critical patent/JPS56110257A/ja
Publication of JPS56110257A publication Critical patent/JPS56110257A/ja
Publication of JPS626658B2 publication Critical patent/JPS626658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1265680A 1980-02-05 1980-02-05 Differential-type transistor circuit device Granted JPS56110257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1265680A JPS56110257A (en) 1980-02-05 1980-02-05 Differential-type transistor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1265680A JPS56110257A (en) 1980-02-05 1980-02-05 Differential-type transistor circuit device

Publications (2)

Publication Number Publication Date
JPS56110257A true JPS56110257A (en) 1981-09-01
JPS626658B2 JPS626658B2 (enrdf_load_html_response) 1987-02-12

Family

ID=11811394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1265680A Granted JPS56110257A (en) 1980-02-05 1980-02-05 Differential-type transistor circuit device

Country Status (1)

Country Link
JP (1) JPS56110257A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002301A (en) * 1996-11-18 1999-12-14 Matsushita Electronics Corporation Transistor and power amplifier
US6114732A (en) * 1997-03-14 2000-09-05 Matsushita Electronics Corporation Field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002301A (en) * 1996-11-18 1999-12-14 Matsushita Electronics Corporation Transistor and power amplifier
US6114732A (en) * 1997-03-14 2000-09-05 Matsushita Electronics Corporation Field effect transistor
US6268632B1 (en) 1997-03-14 2001-07-31 Matsushita Electronics Corporation Field effect transistor and power amplifier including the same

Also Published As

Publication number Publication date
JPS626658B2 (enrdf_load_html_response) 1987-02-12

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