JPS626658B2 - - Google Patents
Info
- Publication number
- JPS626658B2 JPS626658B2 JP55012656A JP1265680A JPS626658B2 JP S626658 B2 JPS626658 B2 JP S626658B2 JP 55012656 A JP55012656 A JP 55012656A JP 1265680 A JP1265680 A JP 1265680A JP S626658 B2 JPS626658 B2 JP S626658B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- layers
- emitter
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002131 composite material Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000605 extraction Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 17
- 238000002955 isolation Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- DRSFVGQMPYTGJY-GNSLJVCWSA-N Deprodone propionate Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(C)=O)(OC(=O)CC)[C@@]1(C)C[C@@H]2O DRSFVGQMPYTGJY-GNSLJVCWSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265680A JPS56110257A (en) | 1980-02-05 | 1980-02-05 | Differential-type transistor circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265680A JPS56110257A (en) | 1980-02-05 | 1980-02-05 | Differential-type transistor circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56110257A JPS56110257A (en) | 1981-09-01 |
| JPS626658B2 true JPS626658B2 (enrdf_load_html_response) | 1987-02-12 |
Family
ID=11811394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1265680A Granted JPS56110257A (en) | 1980-02-05 | 1980-02-05 | Differential-type transistor circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56110257A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3346193B2 (ja) * | 1996-11-18 | 2002-11-18 | 松下電器産業株式会社 | 電力増幅器 |
| JP3379376B2 (ja) | 1997-03-14 | 2003-02-24 | 松下電器産業株式会社 | 電界効果トランジスタおよびそれを用いた電力増幅器 |
-
1980
- 1980-02-05 JP JP1265680A patent/JPS56110257A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56110257A (en) | 1981-09-01 |
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