JPS56107579A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56107579A
JPS56107579A JP906480A JP906480A JPS56107579A JP S56107579 A JPS56107579 A JP S56107579A JP 906480 A JP906480 A JP 906480A JP 906480 A JP906480 A JP 906480A JP S56107579 A JPS56107579 A JP S56107579A
Authority
JP
Japan
Prior art keywords
emitter
base contact
silicon nitride
domain
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP906480A
Other languages
Japanese (ja)
Inventor
Nobuki Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP906480A priority Critical patent/JPS56107579A/en
Publication of JPS56107579A publication Critical patent/JPS56107579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a transistor superior in high frequency characteristic to have the interval between emitter and base contact reduced by dividing a selective oxidation process into two times for decision of an element domain and a contact domain. CONSTITUTION:A silicon nitride film is formed selectively on a semiconductor substrate, and the surface is oxidized to form a thick oxide film 1. Next, a P type impurity is injected in a base domain, the silicon nitride film between emitter and base contact is removed to oxidize the surface, thus forming an oxide film 8 thereon. Further, the silicon nitride film 9 on the base contact is removed to diffuse a high density of P type impurity, the base contact 12 is thus formed and also an oxide film is formed. After that, a silicon nitride film 7 on the emitter is removed to diffuse an N type impurity to form an emitter domain 13. A manufacturing tolerance is secured in the interval for the manufacture of emitter and base contact according to the above constitution, therefore a high performance of semiconductor device is obtainable through adjusting the interval.
JP906480A 1980-01-29 1980-01-29 Manufacture of semiconductor device Pending JPS56107579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP906480A JPS56107579A (en) 1980-01-29 1980-01-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP906480A JPS56107579A (en) 1980-01-29 1980-01-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56107579A true JPS56107579A (en) 1981-08-26

Family

ID=11710176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP906480A Pending JPS56107579A (en) 1980-01-29 1980-01-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56107579A (en)

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