JPS56105632A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56105632A
JPS56105632A JP897680A JP897680A JPS56105632A JP S56105632 A JPS56105632 A JP S56105632A JP 897680 A JP897680 A JP 897680A JP 897680 A JP897680 A JP 897680A JP S56105632 A JPS56105632 A JP S56105632A
Authority
JP
Japan
Prior art keywords
film
layer
mask
contact hole
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP897680A
Other languages
English (en)
Inventor
Natsuo Tsubouchi
Kazuo Ito
Shinichi Sato
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP897680A priority Critical patent/JPS56105632A/ja
Publication of JPS56105632A publication Critical patent/JPS56105632A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP897680A 1980-01-28 1980-01-28 Manufacture of semiconductor device Pending JPS56105632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP897680A JPS56105632A (en) 1980-01-28 1980-01-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP897680A JPS56105632A (en) 1980-01-28 1980-01-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56105632A true JPS56105632A (en) 1981-08-22

Family

ID=11707710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP897680A Pending JPS56105632A (en) 1980-01-28 1980-01-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56105632A (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140865A (en) * 1974-10-04 1976-04-06 Nippon Electric Co Handotaisochino seizohoho
JPS5219070A (en) * 1975-08-05 1977-01-14 Toshiba Corp Distribution method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140865A (en) * 1974-10-04 1976-04-06 Nippon Electric Co Handotaisochino seizohoho
JPS5219070A (en) * 1975-08-05 1977-01-14 Toshiba Corp Distribution method

Similar Documents

Publication Publication Date Title
JPS5519857A (en) Semiconductor
JPS551103A (en) Semiconductor resistor
JPS5240969A (en) Process for production of semiconductor device
JPS54154272A (en) Contact forming method for semiconductor device
JPS5745947A (en) Mos type semiconductor integrated circuit
JPS56105632A (en) Manufacture of semiconductor device
JPS5299085A (en) Production of semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS57109365A (en) Semiconductor ic device
JPS5750451A (en) Semiconductor
JPS5527659A (en) Method of manufacturing semiconductor device
JPS56165320A (en) Formation of multilayer electrodes of semiconductor device
JPS57181143A (en) Manufacture of semiconductor device
JPS56115566A (en) Manufacture of mos semiconductor device
JPS5766651A (en) Manufacture of semiconductor device
JPS5385158A (en) Electrode forming method of semiconductor device
JPS5527662A (en) Method of manufacturing semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS5512775A (en) Manufacturing method of semiconductor
JPS5521121A (en) Manufacturing method for transistor
JPS5762543A (en) Manufacture of semiconductor device
JPS5527660A (en) Method of manufacturing semiconductor device
JPS5271994A (en) Semiconductor integrated circuit device
JPS56110229A (en) Manufacture of semiconductor device
JPS57136366A (en) Manufacture of semiconductor device