JPS5219070A - Distribution method - Google Patents
Distribution methodInfo
- Publication number
- JPS5219070A JPS5219070A JP9515575A JP9515575A JPS5219070A JP S5219070 A JPS5219070 A JP S5219070A JP 9515575 A JP9515575 A JP 9515575A JP 9515575 A JP9515575 A JP 9515575A JP S5219070 A JPS5219070 A JP S5219070A
- Authority
- JP
- Japan
- Prior art keywords
- distribution method
- etching
- spacer
- reducing
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: A distribution method which makes the ultra fine aluminum patterning possible by means of reducing the side etching quantity thereby performing the etching of spacer-layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9515575A JPS5219070A (en) | 1975-08-05 | 1975-08-05 | Distribution method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9515575A JPS5219070A (en) | 1975-08-05 | 1975-08-05 | Distribution method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5219070A true JPS5219070A (en) | 1977-01-14 |
Family
ID=14129887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9515575A Pending JPS5219070A (en) | 1975-08-05 | 1975-08-05 | Distribution method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5219070A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
| JPS55134932A (en) * | 1979-04-10 | 1980-10-21 | Toshiba Corp | Preparation of semiconductor device |
| JPS56105632A (en) * | 1980-01-28 | 1981-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS57169258A (en) * | 1981-04-10 | 1982-10-18 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1975
- 1975-08-05 JP JP9515575A patent/JPS5219070A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
| JPS55134932A (en) * | 1979-04-10 | 1980-10-21 | Toshiba Corp | Preparation of semiconductor device |
| JPS56105632A (en) * | 1980-01-28 | 1981-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS57169258A (en) * | 1981-04-10 | 1982-10-18 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
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