JPS56105624A - Manufacture of plate-type silicon crystal - Google Patents

Manufacture of plate-type silicon crystal

Info

Publication number
JPS56105624A
JPS56105624A JP829280A JP829280A JPS56105624A JP S56105624 A JPS56105624 A JP S56105624A JP 829280 A JP829280 A JP 829280A JP 829280 A JP829280 A JP 829280A JP S56105624 A JPS56105624 A JP S56105624A
Authority
JP
Japan
Prior art keywords
plate
flat plates
flat
hard
paralleled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP829280A
Other languages
Japanese (ja)
Other versions
JPS5733698B2 (en
Inventor
Takeshi Saito
Akio Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP829280A priority Critical patent/JPS56105624A/en
Publication of JPS56105624A publication Critical patent/JPS56105624A/en
Publication of JPS5733698B2 publication Critical patent/JPS5733698B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt

Abstract

PURPOSE:To enable to reuse a paralleled flat plate over and over again by a method wherein the powder type mold release having the hard-to-wet property to an Si fused liquid is coated on the surfaces facing each other of the two paralleled flat plates made of the material having the hard-to-wet property to the Si fused layer. CONSTITUTION:On the surfaces facing each other of the paralleled flat plates 1 and 2 made of a hard-to-wet material to the Si fused liquid, a powder type mold release 4 having the same property as above is coated. The Si fused liquid 3 is placed on the surface of the flat plate 2 between the flat plates 1 and 2. Then the space between these flat plates is narrowered and when the Si fused liquid is depressed, a flat plate 2, which has been stretched out along the surfaces of the flat 1 and 2, is formed. Then, the Si 3 is crystallized by lowering the temperature below the melting point of the Si and a plate type Si crystal is obtained. This plate type Si crystal 3 does not give damage to the flat plates 1 and 2 can be stripped off the flat plates easily.
JP829280A 1980-01-29 1980-01-29 Manufacture of plate-type silicon crystal Granted JPS56105624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP829280A JPS56105624A (en) 1980-01-29 1980-01-29 Manufacture of plate-type silicon crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP829280A JPS56105624A (en) 1980-01-29 1980-01-29 Manufacture of plate-type silicon crystal

Publications (2)

Publication Number Publication Date
JPS56105624A true JPS56105624A (en) 1981-08-22
JPS5733698B2 JPS5733698B2 (en) 1982-07-19

Family

ID=11689084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP829280A Granted JPS56105624A (en) 1980-01-29 1980-01-29 Manufacture of plate-type silicon crystal

Country Status (1)

Country Link
JP (1) JPS56105624A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6139932U (en) * 1984-08-17 1986-03-13 株式会社 ほくさん manufacturing dish
US4637855A (en) * 1985-04-30 1987-01-20 Texas Instruments Incorporated Process for producing crystalline silicon spheres

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6139932U (en) * 1984-08-17 1986-03-13 株式会社 ほくさん manufacturing dish
JPH0322907Y2 (en) * 1984-08-17 1991-05-20
US4637855A (en) * 1985-04-30 1987-01-20 Texas Instruments Incorporated Process for producing crystalline silicon spheres

Also Published As

Publication number Publication date
JPS5733698B2 (en) 1982-07-19

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