JPH0322907Y2 - - Google Patents
Info
- Publication number
- JPH0322907Y2 JPH0322907Y2 JP1984125047U JP12504784U JPH0322907Y2 JP H0322907 Y2 JPH0322907 Y2 JP H0322907Y2 JP 1984125047 U JP1984125047 U JP 1984125047U JP 12504784 U JP12504784 U JP 12504784U JP H0322907 Y2 JPH0322907 Y2 JP H0322907Y2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- melt
- cavity
- wall surface
- pouring hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 235000012431 wafers Nutrition 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000005266 casting Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は太陽電池、その他の光電変換素子等に
用いられている多結晶シリコンウエハの製造に供
される製造皿に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a manufacturing tray used for manufacturing polycrystalline silicon wafers used in solar cells, other photoelectric conversion elements, and the like.
従来、上述多結晶シリコンウエハは、最も一般
的にはシリコン母材により一旦所定形状のインゴ
ツトを鋳造し、これをスライスすることによつて
ウエハを得る方法が実施されている。
Conventionally, the most common method for producing the above-mentioned polycrystalline silicon wafers is to once cast an ingot of a predetermined shape from a silicon base material and then slice the ingot to obtain the wafer.
このスライスによらない方法としてはリボン法
とキヤステイング法（鋳造法）が既に実施されて
いる。 As methods that do not involve slicing, a ribbon method and a casting method have already been implemented.
しかし、上述スライスによる方法は、スライス
作業に大変時間がかかるだけでなく、インゴツト
の約50％がスライス時のロスとなつてしまう為、
製品コストが高くつき、スライス法、リボン法
共々作業能率が悪く、量産も不可能である。 However, with the slicing method mentioned above, not only does the slicing process take a lot of time, but also about 50% of the ingot is lost during slicing.
The product cost is high, both the slice method and the ribbon method have poor work efficiency, and mass production is impossible.
又、上記リボン法やキヤステイング法では大型
の太陽電池素材等が得られない難点があり、更に
キヤステイング法では、シリコン結晶粒に関し
て、満足すべき大きな結晶粒が得られない為、当
該ウエハによつて得られる太陽電池の光電変換効
率についても、やや低いものとなる欠陥をもつて
いる。 In addition, the above-mentioned ribbon method and casting method have the disadvantage of not being able to obtain large-sized solar cell materials, and furthermore, with the casting method, satisfactory large crystal grains cannot be obtained with respect to silicon crystal grains. The photovoltaic conversion efficiency of the resulting solar cell also has the drawback of being somewhat low.
そこで、本願人は、上記諸法の欠陥を改善する
ことができる多結晶シリコンウエハの製造方法と
して既に、シリコン母材を溶融し、この融液を石
英又はカーボンで形成され、かつ回転状態にある
製造皿上に滴下するなどして、遠心力を有効利用
することにより所望拡径状態の融液薄層を層成
し、これを固化後、製造皿から剥離する方法（以
下これをスピン法という）を提案した。 Therefore, the applicant has already developed a method for manufacturing polycrystalline silicon wafers that can improve the defects of the above-mentioned methods, by melting a silicon base material and using this melt as a method of manufacturing polycrystalline silicon wafers made of quartz or carbon and in a rotating state. A method in which a thin layer of melt with a desired expanded diameter is layered by dripping onto a production plate, etc. by effectively utilizing centrifugal force, and this is peeled off from the production plate after solidification (hereinafter referred to as the spin method) ) was proposed.
そして、このスピン法に関しても、本願人は既
に、第２図に示すような量産を目的とした製造皿
の提案をしている。 Regarding this spin method, the applicant has already proposed a production plate for mass production as shown in FIG.
すなわちカーボン等による皿本体ａの上面に、
これまたカーボン等による蓋体ｂを重積し、かつ
両者ａ，ｂを互いに面接状態にある箇所にあつて
施したカーボン螺子ｃ，ｃ……により螺子止めす
ることで、皿本体ａと蓋体ｂとの間に、複数個の
キヤビテイｄ，ｄ……が形成されるようにすると
共に、これらのキヤビテイｄ，ｄ……と連通する
ように蓋体ｂの中央部に注湯孔ｅが立設開口され
たものである。 That is, on the upper surface of the plate body a made of carbon or the like,
Also, by stacking the lids b made of carbon or the like, and screwing them together with carbon screws c, c, etc. applied at the places where both a and b are in contact with each other, the dish body a and the lid A plurality of cavities d, d... are formed between the lid body b, and a pouring hole e is formed in the center of the lid body b so as to communicate with these cavities d, d... It was opened with a special opening.
そして上記製造皿はスピン法の実施に際し、タ
ーンテーブル上に置かれて回転遠心力が付与され
ると共に、高温かつアルゴンガス雰囲気中といつ
た条件下で、上記注湯孔ｅからシリコン母材の融
液が供給されることとなるが、これにより図示の
場合当該融液の量を規定しておくことで図示の如
く四角形のキヤビテイｄ，ｄ……に丁度満杯状態
となつた融液薄層が形成され、これを冷却固化す
ることで多結晶シリコンウエハを製造し得ること
となる。 When carrying out the spin method, the production plate is placed on a turntable and subjected to rotational centrifugal force, and the silicon base material is poured from the pouring hole e under conditions such as high temperature and an argon gas atmosphere. The melt will be supplied, and in the case shown in the figure, by prescribing the amount of the melt, a thin layer of melt will be created that fills the square cavities d, d... exactly as shown in the figure. is formed, and by cooling and solidifying this, a polycrystalline silicon wafer can be manufactured.
ところが、実際上カーボンによる上記製造皿な
どにあつては、製品が剥離可能となるように
Si3N4粉末等による離型剤を塗布して使用するこ
とになり、このようなことから、皿本体ａと蓋体
ｂとの当接面に凹凸が生じ、特に回転数を大きく
した場合には、当該隙間から供給したシリコン融
液が製造皿の外周端から食み出し漏出してしまう
ことがある。 However, in the case of the above-mentioned manufacturing plates made of carbon, it is difficult to make the product removable.
A mold release agent such as Si 3 N 4 powder is applied and used, and as a result, unevenness occurs on the contact surface between the dish body a and the lid body b, especially when the rotation speed is increased. In this case, the silicon melt supplied through the gap may protrude from the outer peripheral edge of the production plate and leak.
そこで、例えば10cm×10cm、厚さ0.5mmのキヤ
ビテイによつて、４枚の多結晶シリコンシートを
製造しようとする場合、計算上の理想量である約
47ｇの原料シリコンを用いて、シリコン溶湯を供
給すればよいことになるが、上記の如き漏出を見
込んで50ｇ以上の原料シリコンによる注湯が行わ
れることとなる。 Therefore, for example, when trying to manufacture four polycrystalline silicon sheets using a cavity of 10 cm x 10 cm and a thickness of 0.5 mm, the calculated ideal amount is approximately
Although it would be sufficient to supply molten silicon using 47 g of raw silicon, 50 g or more of raw silicon would be poured in anticipation of leakage as described above.
このようなことから供給されるシリコン量が過
多となつたとき、前記の如き既応製造皿によると
きは、第２図のｂに明示の如く余剰のシリコン融
液Ａがキヤビテイｄ，ｄ……から注湯孔ｅ側に溢
れ出た状態にて固化してしまい、この結果４枚の
製品がこの溢出部分による余剰固化部によつて連
設されてしまい、このような場合には当該余剰固
化部を切断しなければならないが、当該切断作業
は難かしく、不手際により製品であるウエハを割
つてしまうことがあるだけでなく、このことが大
きく生産能率を低下させている。 For this reason, when the amount of silicon supplied becomes excessive, when using the ready-made manufacturing tray as described above, the excess silicon melt A is poured into the cavities d, d, etc., as shown in Fig. 2b. The molten metal overflows to the side of the pouring hole e and solidifies, and as a result, the four products are connected by the excess solidification caused by this overflowing part.In such a case, the excess solidification However, this cutting operation is difficult, and not only can the product wafer be broken due to carelessness, but this greatly reduces production efficiency.
本考案は上記の如き既応製造皿がもつ難点に鑑
み、キヤビテイの流入口端縁の位置を適切に選定
すると共に皿本体の適所に、シリコンの余剰融液
が落流することになる凹所を設けるだけでなく、
当該凹所の底壁面と上記キヤビテイの流入口端縁
とを、鈍角の曲成再度で傾設の側壁面により連設
することで、キヤビテイ内への遠心力による注湯
を良好に行い得るようにすると共に前記の溢れ出
たシリコン融液を、上記凹所に落流し得るように
なし、もつて生産性を向上させ、かつ前記した余
剰固化部の発生を完全に阻止し得るようにし、原
料シリコンの供給量を厳密に規正しなくとも、常
に余剰固化部のない製品が得られるようにし、こ
の点からも、この種製造工程の生産性を向上しよ
うとするのが、その目的である。
In view of the above-mentioned difficulties with ready-made plates, the present invention has been developed by appropriately selecting the position of the inlet edge of the cavity, and by creating a recess in the appropriate place of the plate body where excess melted silicone will flow down. In addition to providing
By connecting the bottom wall surface of the recess and the edge of the inflow port of the cavity by a side wall surface curved at an obtuse angle and inclined, it is possible to efficiently pour molten metal into the cavity by centrifugal force. At the same time, the overflowing silicon melt is allowed to fall into the recess, thereby improving productivity and completely preventing the occurrence of the above-mentioned surplus solidified portion. The purpose is to always obtain a product without excess solidified parts without strictly regulating the amount of silicon supplied, and from this point of view as well, the purpose is to improve the productivity of this type of manufacturing process.
本考案は上記の目的を達成するため、皿本体に
蓋体を重積して螺子止めすることにより、蓋体の
中央部に開口の注湯孔から注入したシリコン母材
の融液が、回転遠心力により流入されて融液薄層
を形成し、これを固化することで多結晶シリコン
ウエハが製造される複数個のキヤビテイが、上記
皿本体と蓋体との間に形成されたものにおいて、
皿本体における上記各キヤビテイの流入口端縁
を、前記蓋体の注湯孔の下端口縁よりも外周側に
配設し、皿本体の中央に設けた余剰融液落流用の
凹所が、かつ蓋体の注湯孔直下における底壁面
と、当該底壁面の外側端から各キヤビテイの流入
口端縁までを連設し、鈍角の曲成角度で傾設した
側壁面とにより形成されている製造皿を提供しよ
うとするものである。
In order to achieve the above object, the present invention stacks the lid on the dish body and fastens it with screws, so that the melt of the silicon base material injected from the pouring hole in the center of the lid rotates. A plurality of cavities in which polycrystalline silicon wafers are manufactured by flowing in by centrifugal force to form a thin layer of melt and solidifying it are formed between the dish body and the lid,
The inlet edge of each cavity in the dish body is arranged on the outer peripheral side of the lower end mouth edge of the pouring hole of the lid body, and a recess provided in the center of the dish body for excess melt to flow down, and is formed by a bottom wall surface directly below the pouring hole of the lid body, and a side wall surface that extends from the outer end of the bottom wall surface to the inlet edge of each cavity and is inclined at an obtuse curved angle. The aim is to provide manufacturing plates.
本考案では上記の如く注湯孔から注入されたシ
リコン融液は凹所へ流入するが、これが回転遠心
力を受けることによりキヤビテイの流入口端縁に
向つて流れることとなり、この際、上記注湯孔の
下端口縁よりキヤビテイの流入口端縁が外周側に
存するので、当該シリコン融液は蓋体の下端であ
る注湯孔周縁に衝当し、このことでキヤビテイの
流入口端縁内へ流入し易くなる。
In the present invention, as described above, the silicon melt injected from the pouring hole flows into the recess, but due to the rotational centrifugal force, it flows toward the edge of the inlet of the cavity, and at this time, Since the inlet edge of the cavity is located on the outer circumferential side than the lower edge of the molten metal hole, the silicon melt hits the periphery of the pouring hole, which is the lower end of the lid, and this causes the inside of the inlet edge of the cavity. It becomes easier to flow into.
しかも、本考案では、凹所の側壁面が、キヤビ
テイの流入口端縁まで、鈍角の曲成角度にて傾設
されているため、前記回転遠心力をあまり大きく
しなくとも充分に、当該側面を上昇してキヤビテ
イの流入口端縁に向けて流動し、従つて、特別に
製造皿に高い回転を付与しなくとも、キヤビテイ
内のシリコン融液の注入が容易に行われることと
なり、しかも、キヤビテイ内に回転遠心力によつ
て流入したシリコン融液が、固化してしまう以前
に当該回転を停止してやりさえすれば、遠心力を
失うことで、キヤビテイの流入口端縁よりも内心
側に存在する余剰のシリコン融液は、上記凹所内
に落入してしまい、前記の如き余剰固化部が形成
されることはなくなる。 Moreover, in the present invention, since the side wall surface of the recess is inclined at an obtuse bending angle up to the edge of the inlet port of the cavity, the rotational centrifugal force can be sufficiently increased without increasing the rotational centrifugal force. The silicon melt rises and flows toward the inlet edge of the cavity, so that the silicon melt in the cavity can be easily injected without applying a special high rotation to the production plate, and furthermore, If the rotation of the silicon melt that has flowed into the cavity due to centrifugal force is stopped before it solidifies, the centrifugal force will be lost and the silicon melt will be present on the inner side of the inlet edge of the cavity. The excess silicon melt falls into the recess, and the above-mentioned surplus solidified portion is no longer formed.
本考案を第１図の実施例によつて詳記すれば、
同考案にあつても、前記従来例と同じくカーボン
等の高融点素材による皿本体１と蓋体２とが、止
螺子３，３……によつて固定されることで、蓋体
２の中央部に開口され、下向きに大径となるよう
形成した注湯孔４と連通する複数個のキヤビテイ
５，５……が形成される。
The present invention will be described in detail with reference to the embodiment shown in FIG.
Even in the same device, the dish body 1 and the lid body 2 made of a high melting point material such as carbon are fixed by locking screws 3, 3, etc. in the same way as in the conventional example, so that the lid body 2 is fixed at the center. A plurality of cavities 5, 5, . . . are formed which communicate with the pouring hole 4, which is opened at the bottom and has a large diameter facing downward.
ここで図示例では、上記キヤビテイ５，５……
を形成するため、従来例の如く蓋体ｂ側に凹溝を
設けてもよいが、第１図のｂに明示の如く皿本体
１の上面１′にあつて、その外周側４つの四角形
状としたキヤビテイ溝６1，６1……が凹設されて
おり、この際当該各溝６1，６1……の内側辺６2，
６2……にあつて形成されるキヤビテイ５，５…
…の流入口端縁６3，６3……の両端が、互いに順
次連続され、かつ当該流入口端縁６3，６3……
は、上記注湯孔４の下端口縁４ａよりも外周側に
配設されている。 In the illustrated example, the cavities 5, 5...
In order to form a concave groove, a concave groove may be provided on the lid body b side as in the conventional example, but as shown in FIG. The cavity grooves 6 1 , 6 1 . . . are recessed, and at this time , the inner sides 6 2 ,
6 2 The cavities 5, 5, which are formed when...
Both ends of the inlet edges 6 3 , 6 3 ... of ... are successively continuous with each other, and the inlet edges 6 3 , 6 3 ...
is disposed on the outer peripheral side of the lower end edge 4a of the pouring hole 4.
ここで図示例では、上記の流入口端縁６3，６3
……により囲成される注湯孔４の直下位置に、余
剰融液落流用の凹所７が形成されており、同所７
は平面状の底壁面７1と、その外側端から上記流
入口端縁６3，６3……まで直角以上である鈍角の
曲成角度Ｂにて傾設した側壁面７2，７2……とか
らなつており、８，８……は前記止螺子３，３…
…が螺合する螺孔を示す。 In the illustrated example, the above-mentioned inlet edges 6 3 , 6 3
A recess 7 for excess melt to flow is formed directly below the pouring hole 4 surrounded by .
are a planar bottom wall surface 7 1 and side wall surfaces 7 2 , 7 2 . ..., where 8, 8... are the locking screws 3, 3...
...indicates the screw hole to be screwed together.
また上記凹所７は四角形状に形成されている
が、それほどの容量が必要でなければ環状に凹設
するなどのことも可能である。 Further, although the recess 7 is formed in a rectangular shape, it may be recessed in an annular shape if a large capacity is not required.
そこで上記の製造皿を使用する際には、キヤビ
テイ５，５……に、シリコン融液が流入したなら
ば、当該製造皿は回転状態におかれているので、
当該シリコン融液は凹所７の底壁面７1から傾設
の側壁面７2を流昇してキヤビテイ５，５……に
流入するのが、この際側壁面７2は鈍角であるた
め、それほど製造皿の回転数を大きくしなくとも
流昇可能であり、かつ、当該シリコン融液は、蓋
体２における注入孔４の下端口縁４ａにおける外
周下面に衝当するため、キヤビテイ５，５……側
へ流導されることとなる。 Therefore, when using the above-mentioned manufacturing pan, if the silicon melt flows into the cavities 5, 5..., the manufacturing pan is placed in a rotating state, so
The silicon melt flows upward from the bottom wall surface 7 1 of the recess 7 up the inclined side wall surface 7 2 and flows into the cavities 5, 5 . The silicon melt can flow up without increasing the number of revolutions of the production tray, and the silicon melt hits the lower outer circumferential surface of the lower end rim 4a of the injection hole 4 in the lid 2, so ...and will be led to the side.
そして、キヤビテイ５，５……内にシリコン融
液が流入したならば、これが固化してしまう以前
に、同皿の回転を停止させ、これにより流入口端
縁６3，６3……の内側に溢出している融液は、そ
の重力によつて凹所７に落流し、このときキヤビ
テイ５，５……内に流入済の融液薄層は、融液の
表面張力によりその場に留り、食み出しのない製
品が得られる。 When the silicon melt flows into the cavities 5, 5..., the rotation of the plate is stopped before it solidifies, thereby causing the inside of the inlet edges 63 , 63 ... The melt overflowing into the cavities 5, 5... falls into the recess 7 due to its gravity, and at this time, the thin layer of melt that has flowed into the cavities 5, 5... remains in place due to the surface tension of the melt. A product with no protrusion can be obtained.
本考案は前記のように構成され、上記のように
具現されるものであるから、製造時の回転遠心力
を与えたときは、凹所の鈍角である側壁面の形成
と、注湯孔の下端口縁よりもキヤビテイの流入口
端縁が外周側に開口されていることで、シリコン
融液等のキヤビテイに対する流入が円滑に行わ
れ、生産性の向上に役立つこととなる。
Since the present invention is constructed as described above and is realized as described above, when rotational centrifugal force is applied during manufacturing, the formation of the obtuse side wall surface of the recess and the formation of the pouring hole. Since the inlet edge of the cavity is opened toward the outer circumferential side than the lower edge, silicon melt and the like can smoothly flow into the cavity, which helps improve productivity.
さらに、上記の遠心力を適時停止してやるだけ
の操作で、供給されたシリコン融液が過多であつ
ても、食み出しによる余剰固化部が製品に連着し
てしまうといつたことなく、従つて従来の製造皿
の場合のように余剰固化部の切断といつた労力が
全く不要となり、その生産性を向上でき、シリコ
ン融液の供給量にも、それほどの精度が要求され
ないこととなつて、この点からも作業能率を改善
することができる。 Furthermore, by simply stopping the centrifugal force as described above, even if an excessive amount of silicon melt is supplied, the excess solidified portion due to protrusion will not adhere to the product. This eliminates the need for labor such as cutting off excess solidified portions, which is required in the case of conventional production plates, improving productivity, and requiring less precision in the amount of silicon melt supplied. , Work efficiency can be improved from this point as well.
第１図は本考案に係る製造皿の一実施例を示
し、ａはその縦断正面図、ｂは皿本体の平面図、
第２図は同製造皿の従来例を示し、ａがその平面
図、ｂは同縦断正面図である。
１……皿本体、２……蓋体、３……止螺子、４
……注湯孔、４ａ……注湯孔の下端口縁、５……
キヤビテイ、６3……流入口端縁、７……凹所、
７1……凹所の底壁面、７2……凹所の側壁面、Ｂ
……曲成角度。
FIG. 1 shows an embodiment of the production plate according to the present invention, in which a is a longitudinal sectional front view thereof, b is a plan view of the plate body,
FIG. 2 shows a conventional example of the same manufacturing plate, in which a is a plan view thereof and b is a longitudinal sectional front view thereof. 1... Dish body, 2... Lid body, 3... Set screw, 4
...Pouring hole, 4a...Lower edge of pouring hole, 5...
Cavity, 6 3 ... Inlet edge, 7... Recess,
7 1 ... Bottom wall surface of the recess, 7 2 ... Side wall surface of the recess, B
...bending angle.
Claims (1)
り、蓋体の中央部に開口の注湯孔から注入したシ
リコン部材の融液が、回転遠心力により流入され
て融液薄層を形成し、これを固化することで多結
晶シリコンウエハが製造される複数個のキヤビテ
イが、上記皿本体と蓋体との間に形成されたもの
において、皿本体における上記各キヤビテイの流
入口端縁を、前記蓋体の注湯孔の下端口縁よりも
外周側に配設し、皿本体の中央に設けた余剰融液
落流用の凹所が、蓋体の注湯孔直下における底壁
面と、当該底壁面の外側端から各キヤビテイの流
入口端縁までを連設し、かつ鈍角の曲成角度で傾
設した側壁面とにより形成されている製造皿。 By stacking the lid on the dish body and securing it with screws, the melt of the silicone material injected from the pouring hole opened in the center of the lid flows in due to rotational centrifugal force, forming a thin layer of melt. A plurality of cavities, from which polycrystalline silicon wafers are manufactured by solidifying this, are formed between the dish main body and the lid, and the inlet edge of each cavity in the dish main body is , a recess for excess melt flowing down, which is disposed on the outer circumferential side of the bottom edge of the pouring hole of the lid body and provided in the center of the dish body, is connected to the bottom wall surface directly below the pouring hole of the lid body; A production plate formed by a side wall surface extending from the outer end of the bottom wall surface to the inlet edge of each cavity and tilted at an obtuse curved angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12504784U JPS6139932U (en) | 1984-08-17 | 1984-08-17 | manufacturing dish |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12504784U JPS6139932U (en) | 1984-08-17 | 1984-08-17 | manufacturing dish |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6139932U JPS6139932U (en) | 1986-03-13 |
| JPH0322907Y2 true JPH0322907Y2 (en) | 1991-05-20 |
Family
ID=30683732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12504784U Granted JPS6139932U (en) | 1984-08-17 | 1984-08-17 | manufacturing dish |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6139932U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3596828B2 (en) * | 1995-07-17 | 2004-12-02 | キヤノン株式会社 | Substrate manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121086A (en) * | 1978-03-14 | 1979-09-19 | Agency Of Ind Science & Technol | Forming method of silicon plate |
| JPS56105624A (en) * | 1980-01-29 | 1981-08-22 | Agency Of Ind Science & Technol | Manufacture of plate-type silicon crystal |
| JPS57181175A (en) * | 1981-04-30 | 1982-11-08 | Hoxan Corp | Manufacture of polycrystalline silicon wafer |
-
1984
- 1984-08-17 JP JP12504784U patent/JPS6139932U/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121086A (en) * | 1978-03-14 | 1979-09-19 | Agency Of Ind Science & Technol | Forming method of silicon plate |
| JPS56105624A (en) * | 1980-01-29 | 1981-08-22 | Agency Of Ind Science & Technol | Manufacture of plate-type silicon crystal |
| JPS57181175A (en) * | 1981-04-30 | 1982-11-08 | Hoxan Corp | Manufacture of polycrystalline silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6139932U (en) | 1986-03-13 |
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