JPH0246048Y2 - - Google Patents

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Publication number
JPH0246048Y2
JPH0246048Y2 JP12504684U JP12504684U JPH0246048Y2 JP H0246048 Y2 JPH0246048 Y2 JP H0246048Y2 JP 12504684 U JP12504684 U JP 12504684U JP 12504684 U JP12504684 U JP 12504684U JP H0246048 Y2 JPH0246048 Y2 JP H0246048Y2
Authority
JP
Japan
Prior art keywords
lid
divided
cavity
dish
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12504684U
Other languages
Japanese (ja)
Other versions
JPS6139931U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP12504684U priority Critical patent/JPS6139931U/en
Publication of JPS6139931U publication Critical patent/JPS6139931U/en
Application granted granted Critical
Publication of JPH0246048Y2 publication Critical patent/JPH0246048Y2/ja
Granted legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は太陽電池、その他の光電変換素子等に
用いられている多結晶シリコンウエハの製造に供
される製造皿に関する。
[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a manufacturing tray used for manufacturing polycrystalline silicon wafers used in solar cells, other photoelectric conversion elements, and the like.

〔従来の技術〕[Conventional technology]

従来、上述多結晶シリコンウエハは、最も一般
的にはシリコン母材により一旦所定形状のインゴ
ツトを鋳造し、これをスライスすることによつて
ウエハを得る方法が実施されている。
Conventionally, the most common method for producing the above-mentioned polycrystalline silicon wafers is to once cast an ingot of a predetermined shape from a silicon base material and then slice the ingot to obtain the wafer.

このスライスによらない方法としてはリボン法
とキヤステイング法(鋳造法)が既に実施されて
いる。
As methods that do not involve slicing, a ribbon method and a casting method have already been implemented.

しかし、上述スライスによる方法は、スライス
作業に大変時間がかかるだけでなく、インゴツト
の約50%がスライス時のロスとなつてしまう為、
製品コストが高くつき、大量生産も不可能であ
る。
However, with the slicing method mentioned above, not only does the slicing process take a lot of time, but also about 50% of the ingot is lost during slicing.
The product cost is high and mass production is not possible.

又、上記リボン法とキヤステイング法では大型
の太陽電池素材等が得られない難点があり、更に
キヤステイング法では、シリコン結晶粒に関し
て、満足すべき大きな結晶粒が得られない為、当
該ウエハによつて得られる太陽電池の光電変換効
率についても、やや低いものとなる欠陥をもつて
いる。
In addition, the above-mentioned ribbon method and casting method have the disadvantage of not being able to obtain large solar cell materials, and furthermore, the casting method cannot obtain satisfactorily large silicon crystal grains, so The photovoltaic conversion efficiency of the resulting solar cell also has the drawback of being somewhat low.

そこで、本願人は、上記諸法の欠陥を改善する
ことができる多結晶シリコンウエハの製造方法と
して既に、シリコン母材を溶融し、この融液を石
英又はカーボンで形成され、かつ回転状態にある
製造皿上に滴下するなどして、遠心力を有効利用
することにより所望拡径状態の融液薄層を層成
し、これを固化後、製造皿から剥離する方法(以
下これをスピン法という)を提案した。
Therefore, the applicant has already developed a method for manufacturing polycrystalline silicon wafers that can improve the defects of the above-mentioned methods, by melting a silicon base material and using this melt as a method of manufacturing polycrystalline silicon wafers made of quartz or carbon and in a rotating state. A method in which a thin layer of melt with a desired expanded diameter is layered by dripping onto a production plate, etc. by effectively utilizing centrifugal force, and this is peeled off from the production plate after solidification (hereinafter referred to as the spin method) ) was proposed.

そして、このスピン法に関しても、本願人は既
に、第2図に示すような量産を目的とした製造皿
の提案をしている。
Regarding this spin method, the applicant has already proposed a production plate for mass production as shown in FIG.

すなわち、カーボン等による皿本体aの上面
に、当該本体aと略同じ大きさをもつた、これま
たカーボン等による一枚の蓋体bを重積し、かつ
両者a,bを、互いに面接状態となる箇所にあつ
て施したカーボン螺子c,c……により螺子止め
することで、皿本体aと蓋体bとの間に、複数個
のキヤビテイd,d……が形成されるようにする
と共に、これらのキヤビテイd,d……と連通す
るように蓋体bの中央部に注湯孔eを立設開口し
たものである。
That is, a lid b made of carbon or the like and having approximately the same size as the main body a is stacked on the top surface of a dish body a made of carbon or the like, and both a and b are placed in a state where they face each other. A plurality of cavities d, d... are formed between the dish main body a and the lid body b by screwing them with carbon screws c, c... applied at the locations where . In addition, a pouring hole e is erected in the center of the lid b so as to communicate with these cavities d, d, . . . .

この製造皿はスピン法の実施に際し、ターンテ
ーブル上に置かれて回転遠心力が付与されると共
に、高温かつアルゴンガス雰囲気中といつた条件
下で、上記注湯孔eからシリコン母材の融液が供
給されることとなるが、これにより図示の場合当
該融液は4つのキヤビテイd,d……内に流入
し、予め融液の量を規定しておくことで図示の如
く四角形のキヤビテイd,d……に丁度満杯状態
となつた融液薄層が形成され、これを冷却固化す
ることで、多結晶シリコンウエハを製造し得るこ
ととなる。
When carrying out the spin method, this production plate is placed on a turntable and a rotating centrifugal force is applied to it, and the silicon base material is melted from the pouring hole e under conditions such as high temperature and an argon gas atmosphere. As a result, the melt flows into the four cavities d, d... in the case shown in the figure, and by predetermining the amount of the melt, it is possible to form rectangular cavities as shown in the figure. A thin layer of melt that is exactly full is formed at d, d, . . . , and by cooling and solidifying this, a polycrystalline silicon wafer can be manufactured.

ところが実際上カーボンによる上記製造皿にあ
つては、製品が剥離可能となるようにSi3N4粉末
等による離型剤を塗布するので、特にこれにより
皿本体aと蓋体bとの当接面に小さな凹凸が生ず
ることがあり、このような場合蓋体bが全体とし
て可成り歪むこととなつて、両者a,bの当接す
べき面間に隙間ができてしまうことになり、この
ような現象はカーボン螺子C,C……を如何に強
く締め付けても、蓋体bの歪みを全面的に矯正す
ることは困難となる。
However, in the case of the above-mentioned manufactured plates made of carbon, a mold release agent such as Si 3 N 4 powder is applied so that the product can be peeled off. Small irregularities may occur on the surface, and in such a case, the lid b as a whole will be distorted considerably, and a gap will be created between the surfaces a and b that should be in contact. Such a phenomenon makes it difficult to completely correct the distortion of the lid body b, no matter how strongly the carbon screws C, C, . . . are tightened.

この結果溶液シリコンを前記のように注入した
とき、シリコンがキヤビテイd,d……の外周端
末から食み出してしまうだけでなく、これにより
製品に欠損部が生ずる欠陥がある。
As a result, when the solution silicon is injected as described above, not only does the silicon protrude from the outer peripheral end of the cavities d, d, .

従つて、このような融液の漏出を避けようとす
ることから、どうしても前記ターンテーブルの回
転数を大きくできないことになり、従つてキヤビ
テイの厚さを小さくして薄い多結晶シリコンウエ
ハを製造しようとしても、簡単に製造することが
できない。
Therefore, in order to avoid such leakage of the melt, it is impossible to increase the rotation speed of the turntable, so it is necessary to reduce the thickness of the cavity to manufacture thin polycrystalline silicon wafers. However, it cannot be easily manufactured.

〔考案が解決しようとする問題点〕[Problem that the invention attempts to solve]

本考案は上記従前の製造皿がもつ難点に鑑み、
その蓋体を一枚のものではなくて、適切に分割さ
れた分割小体を当接させることにより構成すると
共に、その大きさを可及的に小さくし、かつ分割
されたものを一個宛各別に皿本体に螺子止めする
ことで、蓋体に生じた一箇所の歪みを全体に波及
させて隙間を大きくしてしまうことのないよう、
分割小体の個々を強力に螺子止め可能として隙間
の発生を可及的に抑制し、前記の食み出し、欠損
の問題を改善して高速回転による薄手製品の生産
性を向上すると共に、食み出しの抑制により原料
コストの低廉化をも図ろうとするのが、その目的
である。
This invention was developed in consideration of the above-mentioned difficulties with the conventional manufacturing plates.
The lid body is not made of a single piece, but is constructed by abutting properly divided small pieces, and the size is made as small as possible, and each piece is divided into pieces. Separately, by screwing it to the main body of the dish, it is possible to prevent distortion in one place on the lid from spreading to the entire body and increasing the gap.
The individual divided bodies can be strongly screwed together to suppress the occurrence of gaps as much as possible, improve the above-mentioned protrusion and chipping problems, and improve the productivity of thin products due to high-speed rotation. The purpose is to reduce raw material costs by suppressing seepage.

〔問題点を解決するための手段〕[Means for solving problems]

本考案は上記の目的を達成するため、皿本体に
蓋体を重積して螺子止めすることにより、蓋体の
中央部に開口の注湯孔から注入したシリコン母材
の融液が、回転遠心力により流入されて融液薄層
を形成し、これを固化することで多結晶シリコン
ウエハが製造される複数個のキヤビテイが、上記
皿本体と蓋体との間に形成されたものにおいて、
上記蓋体が前記注湯孔をもつた中央分割小体と、
これに当接して上記キヤビテイを閉成するキヤビ
テイ用分割小体とにより構成され、これら全分割
小体は皿本体を部分的に閉成するよう重積され、
かつ各分割小体ごとに螺子止めされてなる多結晶
シリコンウエハ用製造皿を提供したものである。
In order to achieve the above object, the present invention stacks the lid on the dish body and fastens it with screws, so that the melt of the silicon base material injected from the pouring hole in the center of the lid rotates. A plurality of cavities in which polycrystalline silicon wafers are manufactured by flowing in by centrifugal force to form a thin layer of melt and solidifying it are formed between the dish body and the lid,
a centrally divided small body in which the lid body has the pouring hole;
and a cavity segmented body that contacts this to close the cavity, and all of these segmented bodies are stacked so as to partially close the dish body,
In addition, a manufacturing tray for polycrystalline silicon wafers is provided in which each divided small body is screwed.

〔実施例〕〔Example〕

本考案を第1図の実施例によつて詳記すれば、
同考案にあつても、従来例と同じくカーボン等の
高融点素材による皿本体1と蓋体2とが、止螺子
3,3……によつて固定されることで、蓋体2の
中央部に開口した注湯孔4と連通する複数個のキ
ヤビテイ5,5……が形成される。
The present invention will be described in detail with reference to the embodiment shown in FIG.
Even in the same device, the dish body 1 and the lid 2 made of a high melting point material such as carbon are fixed by locking screws 3, 3, etc., as in the conventional example, so that the central part of the lid 2 is fixed. A plurality of cavities 5, 5, .

そして、図示例では上記キヤビテイ5,5……
を形成するため、第1図の(b)に示される通り皿本
体1の表面に円形状の中央注入溝61を形成し、
その外周側に凹設した四個のキヤビテイ溝62
2……と上記注入溝61とを、連通細溝63,63
……によつて連続させるようにしてあり、これら
の凹溝が設けられていない平滑面7にあつて、中
央注入溝61の両側、キヤビテイ溝62,62……
の円周方向両側に夫々螺子止め孔8,8……が穿
設されている。
In the illustrated example, the cavities 5, 5...
In order to form a circular central injection groove 61 on the surface of the dish body 1 as shown in FIG. 1(b),
Four cavity grooves 6 2 recessed on the outer circumferential side,
6 2 ... and the injection groove 6 1 are connected to the narrow grooves 6 3 , 6 3 that communicate with each other.
..., and on the smooth surface 7 where these grooves are not provided, cavity grooves 6 2 , 6 2 ... are formed on both sides of the central injection groove 6 1 .
Screw holes 8, 8, . . . are formed on both sides in the circumferential direction, respectively.

ここで本考案では上記の蓋体2が、従来例のよ
うに一個にて形成されているのではなく、同図
a,cに明示の如く下方に向け大径となるようテ
ーパー状に起立開口されている前記注湯孔4を具
備している中央分割小体21と、これに当接して
前記のキヤビテイ5,5……を閉成するキヤビテ
イ用分割小体22,22……とにより分割されてい
る。
Here, in the present invention, the above-mentioned lid body 2 is not formed in one piece as in the conventional example, but has an upright opening that tapers downward and has a larger diameter, as clearly shown in Figures a and c. The center divided small body 2 1 is provided with the pouring hole 4, and the cavity divided small bodies 2 2 , 2 2 . It is divided by.

図示例では中央分割小体21が角筒状に形成さ
れて、これが中央注入溝61と連通細溝63,63
……の一部を閉成しており、当該分割小体21
各辺には、これより低く四角板状に形成されたキ
ヤビテイ用分割小体22,22……の一辺が当接さ
れ、これにより当該小体が連通細溝63,63……
の残部と各キヤビテイ溝62,62……を閉成して
いる。
In the illustrated example, the central divided body 2 1 is formed into a rectangular tube shape, and this is connected to the central injection groove 6 1 and the narrow grooves 6 3 , 6 3 .
... is partially closed, and each side of the divided small body 2 1 corresponds to one side of the cavity divided small bodies 2 2 , 2 2 . This causes the small bodies to form the communicating narrow grooves 6 3 , 6 3 . . .
The remaining portion of the cavity grooves 6 2 , 6 2 . . . are closed.

そして皿本体1に各分割小体21,22,22
…を重積した際、同図aに示す如く蓋体2が皿本
体1の平滑面7を全面的に閉成してしまうのでな
く、同面7の一部が露呈するよう当該分割小体は
可及的に小さく仕上げられており、中央分割小体
1には、その対角線上にてカーボン等による止
螺子3,3……を挿通できるようにしてあるが、
キヤビテイ用分割小体22,22……では、両側に
突出部9,9を突設し、ここに同螺子3,3……
を挿通して、前記螺子止め孔8,8……に螺着す
るようにしている。
Then, each divided small body 2 1 , 2 2 , 2 2 . . . is attached to the dish main body 1.
When stacking..., the lid body 2 does not completely close the smooth surface 7 of the dish body 1 as shown in figure a, but the divided small pieces are arranged so that a part of the same surface 7 is exposed. is made as small as possible, and set screws 3, 3, etc. made of carbon or the like can be inserted diagonally into the centrally divided small body 21 .
In the cavity segmented bodies 2 2 , 2 2 . . ., protrusions 9, 9 are provided on both sides, and the same screws 3, 3 .
are inserted into the screw holes 8, 8, . . . .

尚上記実施例では、5個の分割小体に分割して
あるが、中央分割小体21を、当該図示小体21
一個のキヤビテイ用分割小体22を連設したもの
として構成するようにしてもよく、また図示例で
はキヤビテイ5,5……を形成するため皿本体1
に凹溝を設けるようにしてあるが、逆に蓋体2側
の下面に凹溝を形成するようにしてもよいことも
ちろんである。
In the above embodiment, it is divided into five divided small bodies, but the central divided small body 2 1 is configured such that one cavity divided small body 2 2 is connected to the illustrated small body 2 1 . In the illustrated example, the plate body 1 is used to form the cavities 5, 5...
Although a groove is provided on the lower surface of the lid body 2, it goes without saying that the groove may be formed on the lower surface of the lid 2 side.

図示のようにして構成したものにつき、Si3N4
粉末をアルコールにといてスプレーすることによ
り、離型剤層を形成し、皿本体1は直径36cm、キ
ヤビテイ5,5……は10cm×10cmとなし、当該製
造皿をシリコンの融点に保つて、その注湯孔4か
ら溶融シリコンを流入させた後、製造皿の回転数
を徐々に上げていつたところ、従来例にあつては
360rpmにて、融液の食み出しが周辺に飛散した
のに対し、この場合には600rpmまで融液の漏出
を阻止することができた。
For the configuration shown, Si 3 N 4
By dissolving the powder in alcohol and spraying it, a release agent layer is formed, and the dish body 1 is 36 cm in diameter, the cavities 5, 5... are 10 cm x 10 cm, and the production dish is maintained at the melting point of silicone. After pouring the molten silicon through the pouring hole 4, the rotation speed of the production plate was gradually increased, and as a result, in the conventional example,
At 360 rpm, the melt leaked out and scattered around, but in this case it was possible to prevent melt leakage up to 600 rpm.

〔考案の効果〕[Effect of idea]

本考案は前記のように構成され、上記のように
して具現されるものであるから、一つの分割小体
に前記の如き凹凸に基づく歪みが生じても、これ
が他の分割小体に影響を与えることなく、従つて
皿本体と蓋体との間隙も大きくならず、しかも各
分割小体毎に、独立して螺子止めされ、かつ皿本
体と分割小体との接触面積は小さいから、螺子の
締付けによる接触圧力は従来例に比し約10倍程度
とすることができ、これらの結果溶融シリコンの
食み出し、そして製品の欠損につき飛躍的な改善
効果を発揮でき、前記の如き高速回転が安心して
できるので、薄手の多結晶シリコンウエハ、すな
わち厚さ0.2mm以下のものでも簡単に製造できる
こととなる。
Since the present invention is constructed and implemented as described above, even if distortion occurs in one segmented body due to the above-mentioned unevenness, this will not affect other segmented bodies. Therefore, the gap between the dish body and the lid body does not become large, and each divided body is screwed independently, and the contact area between the dish body and the divided bodies is small, so the screws do not need to be tightened. The contact pressure due to tightening can be approximately 10 times that of the conventional method, and as a result, it is possible to dramatically improve the problem of molten silicon extrusion and product chipping. Since this can be done safely, even thin polycrystalline silicon wafers, that is, those with a thickness of 0.2 mm or less, can be manufactured easily.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案に係る製造皿を示し、aが平面
図、bは皿本体の平面図、cがaの縦断正面図、
第2図は従来の製造皿を示し、aがその平面図、
bはその縦断正面図である。 1……皿本体、2……蓋体、3……止螺子、2
……中央分割小体、22……キヤビテイ用分割小
体、4……注湯孔、5……キヤビテイ。
FIG. 1 shows a manufacturing dish according to the present invention, in which a is a plan view, b is a plan view of the main body of the dish, and c is a longitudinal sectional front view of a.
FIG. 2 shows a conventional manufacturing tray, a is a plan view thereof,
b is a longitudinal sectional front view thereof. 1... Dish body, 2... Lid body, 3... Set screw, 2
1 ... Center divided body, 2 2 ... Cavity segmented body, 4... Pouring hole, 5... Cavity.

Claims (1)

【実用新案登録請求の範囲】 (1) 皿本体に蓋体を重積して螺子止めすることに
より、蓋体の中央部に開口の注湯孔から注入し
たシリコン母材の融液が、回転遠心力により流
入されて融液薄層を形成し、これを固化するこ
とで多結晶シリコンウエハが製造される複数個
のキヤビテイが、上記皿本体と蓋体との間に形
成されたものにおいて、上記蓋体が前記注湯孔
をもつた中央分割小体と、これに当接して上記
キヤビテイを閉成するキヤビテイ用分割小体と
により構成され、これらの全分割小体は皿本体
を部分的に閉成するよう重積され、かつ各分割
小体ごとに螺子止めされてなる多結晶シリコン
ウエハ用製造皿。 (2) 蓋体の中央分割小体が、注湯孔を設けた中央
部と、一つのキヤビテイを閉成するキヤビテイ
用部との連設により形成されている実用新案登
録請求の範囲第1項記載の多結晶シリコンウエ
ハ用製造皿。
[Scope of Claim for Utility Model Registration] (1) By stacking the lid on the dish body and securing it with screws, the molten silicon base material poured into the center of the lid through the pouring hole is rotated. A plurality of cavities in which polycrystalline silicon wafers are manufactured by flowing in by centrifugal force to form a thin layer of melt and solidifying it are formed between the dish body and the lid, The lid body is composed of a central divided body having the pouring hole, and a cavity divided body that comes into contact with the central divided body to close the cavity, and these divided bodies partially cover the dish body. A manufacturing tray for polycrystalline silicon wafers, which is stacked so as to be closed and is screwed to each divided body. (2) Scope of Utility Model Registration Claim 1, in which the centrally divided small body of the lid body is formed by connecting a central part provided with a pouring hole and a cavity part that closes one cavity. The manufacturing dish for polycrystalline silicon wafers described above.
JP12504684U 1984-08-17 1984-08-17 Production plate for polycrystalline silicon wafers Granted JPS6139931U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12504684U JPS6139931U (en) 1984-08-17 1984-08-17 Production plate for polycrystalline silicon wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12504684U JPS6139931U (en) 1984-08-17 1984-08-17 Production plate for polycrystalline silicon wafers

Publications (2)

Publication Number Publication Date
JPS6139931U JPS6139931U (en) 1986-03-13
JPH0246048Y2 true JPH0246048Y2 (en) 1990-12-05

Family

ID=30683731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12504684U Granted JPS6139931U (en) 1984-08-17 1984-08-17 Production plate for polycrystalline silicon wafers

Country Status (1)

Country Link
JP (1) JPS6139931U (en)

Also Published As

Publication number Publication date
JPS6139931U (en) 1986-03-13

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