JPS56105474A - Target for magnetron sputtering - Google Patents
Target for magnetron sputteringInfo
- Publication number
- JPS56105474A JPS56105474A JP660580A JP660580A JPS56105474A JP S56105474 A JPS56105474 A JP S56105474A JP 660580 A JP660580 A JP 660580A JP 660580 A JP660580 A JP 660580A JP S56105474 A JPS56105474 A JP S56105474A
- Authority
- JP
- Japan
- Prior art keywords
- target
- magnetic force
- force line
- strip
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Abstract
PURPOSE:To provide the long-life titled target capable of reducing local sputter evaporation phenomenon and of developing a uniform sputter evaporation by arranging a high magnetic permeable long strip in the direction crossing magnetic force line of perpendicular electromagnetic field, in sputter surface. CONSTITUTION:This target 11 is to generate crosswise magnetic force line in the gap between a magnet 23 and an ion piece 25 by providing a highly permeable long strip 31 on the rear surface of the target 11, in the direction at right angle to the magnetic force line. That is, the strip 31 devides the magnetic force line on the target 11 in the direction at right angle to the magnetic force line, as shown by marks 32. As a result, sputter evaporation area is extended from the area 33 to surface, thus increasing uniformness of evaporation in the target surface 11. At sputtering time, the temperature on the target surface often reaches to 200-300 deg.C or higher, so a ferromagnetic material is preferable as a strip 31. For example, preferable material is a single body of Ni, Co, Fe, etc. or Permalloy and Sendust.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP660580A JPS56105474A (en) | 1980-01-22 | 1980-01-22 | Target for magnetron sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP660580A JPS56105474A (en) | 1980-01-22 | 1980-01-22 | Target for magnetron sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56105474A true JPS56105474A (en) | 1981-08-21 |
Family
ID=11642967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP660580A Pending JPS56105474A (en) | 1980-01-22 | 1980-01-22 | Target for magnetron sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56105474A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6338576A (en) * | 1986-08-01 | 1988-02-19 | Anelva Corp | Sputtering device |
-
1980
- 1980-01-22 JP JP660580A patent/JPS56105474A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6338576A (en) * | 1986-08-01 | 1988-02-19 | Anelva Corp | Sputtering device |
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