JPS5783074A - Magneto-resistive effect type thin film magnetic sensor - Google Patents

Magneto-resistive effect type thin film magnetic sensor

Info

Publication number
JPS5783074A
JPS5783074A JP55158823A JP15882380A JPS5783074A JP S5783074 A JPS5783074 A JP S5783074A JP 55158823 A JP55158823 A JP 55158823A JP 15882380 A JP15882380 A JP 15882380A JP S5783074 A JPS5783074 A JP S5783074A
Authority
JP
Japan
Prior art keywords
magneto
permanent magnet
thin film
magnetic field
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55158823A
Other languages
Japanese (ja)
Other versions
JPH0154872B2 (en
Inventor
Shuzo Abiko
Hiroichi Goto
Akira Niimi
Hirotsugu Takagi
Takeshi Sawada
Hiroshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Canon Electronics Inc
Original Assignee
Canon Inc
Canon Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc, Canon Electronics Inc filed Critical Canon Inc
Priority to JP55158823A priority Critical patent/JPS5783074A/en
Priority to US06/317,386 priority patent/US4506220A/en
Publication of JPS5783074A publication Critical patent/JPS5783074A/en
Publication of JPH0154872B2 publication Critical patent/JPH0154872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To improve accuracy for temperature compensation by disposing a permanent magnet in a close contact with a magneto-resistance effect sencor in a compensating region for temperature. CONSTITUTION:A magneto-resistive element 2 in a sensing region and a magneto resistive element 3 in a compensating region for temperature are so arragned that their axes are perpendicular to each other. By a permanent magnet 9 disposed above the element 3 and by a strong magnetic field 10 of the magnet 9 applied on the element 3, a current flowing in the element 3 is confined in a direction 8 far from the axial line. Accordingly with a resistance of the element 3 being kept constant by an external signal magnetic field, a thin film magnetic sensor which has a good temperature compensation and linearity is obtained. Besides when a permanent magnet 11 is formed by thin film deposition method on the magneto resistive element 3 of the temperature compensation region so as to take a same form, a magnetic flux leaking outside is made very low. Besides, when a magnetized direction of the permanent magnet 11 and an axis of easy magnetization of the element 3 are brought into a coincidence, a magnetization direction of the element 3 is stabilized and confined referring to a magnetization signal, and a bias magnetic field is unnecessary for the element 2.
JP55158823A 1980-11-10 1980-11-13 Magneto-resistive effect type thin film magnetic sensor Granted JPS5783074A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55158823A JPS5783074A (en) 1980-11-13 1980-11-13 Magneto-resistive effect type thin film magnetic sensor
US06/317,386 US4506220A (en) 1980-11-10 1981-11-02 Temperature compensated magnetoresistive effect thin film magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158823A JPS5783074A (en) 1980-11-13 1980-11-13 Magneto-resistive effect type thin film magnetic sensor

Publications (2)

Publication Number Publication Date
JPS5783074A true JPS5783074A (en) 1982-05-24
JPH0154872B2 JPH0154872B2 (en) 1989-11-21

Family

ID=15680151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158823A Granted JPS5783074A (en) 1980-11-10 1980-11-13 Magneto-resistive effect type thin film magnetic sensor

Country Status (1)

Country Link
JP (1) JPS5783074A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126164A1 (en) * 2006-04-28 2007-11-08 Microgate, Inc. Thin film 3 axis fluxgate and the implementation method thereof
JP2018054460A (en) * 2016-09-29 2018-04-05 大同特殊鋼株式会社 Thin film magnetic sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS444378Y1 (en) * 1966-04-20 1969-02-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS444378Y1 (en) * 1966-04-20 1969-02-18

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126164A1 (en) * 2006-04-28 2007-11-08 Microgate, Inc. Thin film 3 axis fluxgate and the implementation method thereof
KR101030110B1 (en) 2006-04-28 2011-04-19 주식회사 마이크로게이트 Thin film 3 axis fluxgate and the imple-mentation method thereof
US8076930B2 (en) 2006-04-28 2011-12-13 Microgate, Inc. Thin film 3 axis fluxgate and the implementation method thereof
JP2018054460A (en) * 2016-09-29 2018-04-05 大同特殊鋼株式会社 Thin film magnetic sensor

Also Published As

Publication number Publication date
JPH0154872B2 (en) 1989-11-21

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