JPS5780579A - Magneto resistive thin film magnetic sensor with thermal compensation - Google Patents
Magneto resistive thin film magnetic sensor with thermal compensationInfo
- Publication number
- JPS5780579A JPS5780579A JP55157067A JP15706780A JPS5780579A JP S5780579 A JPS5780579 A JP S5780579A JP 55157067 A JP55157067 A JP 55157067A JP 15706780 A JP15706780 A JP 15706780A JP S5780579 A JPS5780579 A JP S5780579A
- Authority
- JP
- Japan
- Prior art keywords
- temperature compensation
- thin film
- temperature
- film magnetic
- magnetic sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
PURPOSE:To improve the temperature compensating function by making parts composing an L-shape in a magnets resistive thin film magnetic sensor (MR) element for temperature compensation roughly equal in the resistance value as formed near an MR element for detection of signal magnetic field in an MR sensor with temperature compensation. CONSTITUTION:An MR element 3 at a temperature compensating section is formed in an L shape having a part 3a parallel to an MR element 2 for detection of signal magnetic field and a part 3b crossing it at the right angle. The part 3a and the part 3b are so arranged to be roughly equal in the resistance value. With such an arrangement, the resistance of the MR element 3 for temperature compensation is so dead to the signal magnetic field that it varies only with respect to temperature. This makes the MR element 3 at the temperature compensation section closer to the detecting section thereby enabling smaller size and higher temperature compensation accuracy.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55157067A JPS5780579A (en) | 1980-11-10 | 1980-11-10 | Magneto resistive thin film magnetic sensor with thermal compensation |
US06/317,386 US4506220A (en) | 1980-11-10 | 1981-11-02 | Temperature compensated magnetoresistive effect thin film magnetic sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55157067A JPS5780579A (en) | 1980-11-10 | 1980-11-10 | Magneto resistive thin film magnetic sensor with thermal compensation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5780579A true JPS5780579A (en) | 1982-05-20 |
JPH0323872B2 JPH0323872B2 (en) | 1991-03-29 |
Family
ID=15641494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55157067A Granted JPS5780579A (en) | 1980-11-10 | 1980-11-10 | Magneto resistive thin film magnetic sensor with thermal compensation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5780579A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5841370A (en) * | 1981-09-07 | 1983-03-10 | Hitachi Ltd | Magnetic detection sensor |
JPH02176484A (en) * | 1988-12-28 | 1990-07-09 | Asahi Chem Ind Co Ltd | Ferromagnetic magnetoresistance element |
JPH02231587A (en) * | 1989-03-03 | 1990-09-13 | Tokai Rika Co Ltd | Reference voltage generating device |
-
1980
- 1980-11-10 JP JP55157067A patent/JPS5780579A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5841370A (en) * | 1981-09-07 | 1983-03-10 | Hitachi Ltd | Magnetic detection sensor |
JPH048754B2 (en) * | 1981-09-07 | 1992-02-18 | ||
JPH02176484A (en) * | 1988-12-28 | 1990-07-09 | Asahi Chem Ind Co Ltd | Ferromagnetic magnetoresistance element |
JPH02231587A (en) * | 1989-03-03 | 1990-09-13 | Tokai Rika Co Ltd | Reference voltage generating device |
Also Published As
Publication number | Publication date |
---|---|
JPH0323872B2 (en) | 1991-03-29 |
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