JPS56101774A - Gate turn-off thyristor - Google Patents
Gate turn-off thyristorInfo
- Publication number
- JPS56101774A JPS56101774A JP546480A JP546480A JPS56101774A JP S56101774 A JPS56101774 A JP S56101774A JP 546480 A JP546480 A JP 546480A JP 546480 A JP546480 A JP 546480A JP S56101774 A JPS56101774 A JP S56101774A
- Authority
- JP
- Japan
- Prior art keywords
- buried layer
- dispersion
- gate electrode
- thyristor
- gate turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006185 dispersion Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve the capacity of a breaking current by a method wherein a gate turn-off thyistor with a low proportional resistivity buried layer is provided with a relatively higher proportional resistant base layer between the low resistivity buried layer and a gate electrode in order to nullify the dispersion of the distribution of the resistance in the buried layer. CONSTITUTION:A low resistivity buried layer P2<++> is formed in the base region of a gate turn-off thyristor, and a base layer having relatively high resistivity for instance, about 5OMEGAcm, is placed between a gate electrode 2 and the low resistivity buried layer to attach the gate electrode to the region. By so doing, the dispersion of the distribution of resistance within the surface of the buried layer is compensated, decreasing the concentration of the current due to the structural dispersion in the buried layer. This improves the capacity of the breaking current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP546480A JPS56101774A (en) | 1980-01-19 | 1980-01-19 | Gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP546480A JPS56101774A (en) | 1980-01-19 | 1980-01-19 | Gate turn-off thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101774A true JPS56101774A (en) | 1981-08-14 |
JPS6130756B2 JPS6130756B2 (en) | 1986-07-15 |
Family
ID=11611945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP546480A Granted JPS56101774A (en) | 1980-01-19 | 1980-01-19 | Gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56101774A (en) |
-
1980
- 1980-01-19 JP JP546480A patent/JPS56101774A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6130756B2 (en) | 1986-07-15 |
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